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000810924 1001_ $$0P:(DE-Juel1)130677$$aGunkel, Felix$$b0$$eCorresponding author$$ufzj
000810924 245__ $$aSpace charges and defect concentration profiles at complex oxide interfaces
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000810924 520__ $$aWe discuss electronic and ionic defect concentration profiles at the conducting interface between the two wide-band-gap insulators LaAlO3 and SrTiO3 (STO). The profiles are deduced from a thermodynamic model considering a local space charge layer (SCL) originating from charge transfer to the interface region, thus combining electronic and ionic reconstruction mechanisms. We show that the electrical potential confining the two-dimensional electron gas (2DEG) at the interface modifies the equilibrium defect concentrations in the SCL. For the n-conducting interface, positively charged oxygen vacancies are depleted within the SCL, while negatively charged strontium vacancies accumulate. Charge compensation within the SCL is achieved by a mixed ionic-electronic interface reconstruction, while the competition between 2DEG and localized ionic defects is controlled by ambient pO2. The concentration of strontium vacancies increases drastically in oxidizing conditions and exhibits a steep depth profile towards the interface. Accounting for the low cation diffusivity in STO, we also discuss kinetic limitations of cation defect formation and the effect of a partial equilibration of the cation sublattice. We discuss the resulting implications for low temperature transport
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000810924 7001_ $$0P:(DE-HGF)0$$aDe Souza, Roger A.$$b3
000810924 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b4$$ufzj
000810924 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b5$$ufzj
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