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@ARTICLE{Gunkel:810924,
      author       = {Gunkel, Felix and Waser, R. and Ramadan, Amr H. H. and De
                      Souza, Roger A. and Hoffmann-Eifert, Susanne and Dittmann,
                      Regina},
      title        = {{S}pace charges and defect concentration profiles at
                      complex oxide interfaces},
      journal      = {Physical review / B},
      volume       = {93},
      number       = {24},
      issn         = {2469-9950},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2016-03490},
      pages        = {245431},
      year         = {2016},
      abstract     = {We discuss electronic and ionic defect concentration
                      profiles at the conducting interface between the two
                      wide-band-gap insulators LaAlO3 and SrTiO3 (STO). The
                      profiles are deduced from a thermodynamic model considering
                      a local space charge layer (SCL) originating from charge
                      transfer to the interface region, thus combining electronic
                      and ionic reconstruction mechanisms. We show that the
                      electrical potential confining the two-dimensional electron
                      gas (2DEG) at the interface modifies the equilibrium defect
                      concentrations in the SCL. For the n-conducting interface,
                      positively charged oxygen vacancies are depleted within the
                      SCL, while negatively charged strontium vacancies
                      accumulate. Charge compensation within the SCL is achieved
                      by a mixed ionic-electronic interface reconstruction, while
                      the competition between 2DEG and localized ionic defects is
                      controlled by ambient pO2. The concentration of strontium
                      vacancies increases drastically in oxidizing conditions and
                      exhibits a steep depth profile towards the interface.
                      Accounting for the low cation diffusivity in STO, we also
                      discuss kinetic limitations of cation defect formation and
                      the effect of a partial equilibration of the cation
                      sublattice. We discuss the resulting implications for low
                      temperature transport},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000378816000014},
      doi          = {10.1103/PhysRevB.93.245431},
      url          = {https://juser.fz-juelich.de/record/810924},
}