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| Home > Publications database > Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide > print |
| 001 | 811656 | ||
| 005 | 20240712112822.0 | ||
| 024 | 7 | _ | |a 10.1002/pssc.201510114 |2 doi |
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| 024 | 7 | _ | |a 1862-6351 |2 ISSN |
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| 100 | 1 | _ | |a Guenduez, Deniz |0 P:(DE-Juel1)167214 |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Crystallization and phase separation mechanism of silicon oxide thin films fabricated via e-beam evaporation of silicon monoxide |
| 260 | _ | _ | |a Berlin |c 2015 |b Wiley-VCH |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a In this work, silicon oxide thin films were synthesizedvia e-beam evaporation of silicon monoxide. Subsequentannealing experiments were carried out to induce Sinanocrystals (Si NCs) formation. A broad range of annealingdurations and temperatures were studied. Ramanspectroscopy, X-ray photoelectron spectroscopy (XPS)and Fourier Transform Infrared Spectroscopy (FTIR)were employed to study the mechanism of phase separationin silicon oxide films and crystallization of Si.Raman spectroscopy results show that SiO cannot beconsidered as a composite mixture of Si and SiO2. Resultssuggest that phase separation and crystallization aretwo separate processes even at relatively high temperatures.Amorphous Si formation was observed at annealingtemperatures as low as 800 ◦C. A minimum annealingtemperature of between 800 and 900 ◦C is requiredto form Si NCs. XPS results show a strong phase separationat annealing temperature of 1100 ◦C. |
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| 773 | _ | _ | |a 10.1002/pssc.201510114 |g Vol. 12, no. 9-11, p. 1229 - 1235 |0 PERI:(DE-600)2102966-0 |n 9-11 |p 1229 - 1235 |t Physica status solidi / C |v 12 |y 2015 |x 1862-6351 |
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