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000811683 1001_ $$0P:(DE-HGF)0$$aMorgan, Caitlin$$b0
000811683 245__ $$aImpact of Tunnel-Barrier Strength on Magnetoresistance in Carbon Nanotubes
000811683 260__ $$aCollege Park, Md. [u.a.]$$bAmerican Physical Society$$c2016
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000811683 520__ $$aWe investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both thetemperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. Weshow that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reasonfor the variation between devices previously detected in similar structures. Modeling the data by means ofthe scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrierstrength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yieldsa spin lifetime of tau_s= 1.1 ns, a value comparable with those found in silicon- or graphene-based spin-valvedevices.
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000811683 7001_ $$0P:(DE-Juel1)145304$$aMisiorny, Maciej$$b1
000811683 7001_ $$0P:(DE-HGF)0$$aMetten, Dominik$$b2
000811683 7001_ $$0P:(DE-Juel1)140272$$aHeedt, Sebastian$$b3
000811683 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b4
000811683 7001_ $$0P:(DE-Juel1)130948$$aSchneider, Claus M.$$b5
000811683 7001_ $$0P:(DE-Juel1)130837$$aMeyer, Carola$$b6$$eCorresponding author
000811683 773__ $$0PERI:(DE-600)2760310-6$$a10.1103/PhysRevApplied.5.054010$$gVol. 5, no. 5, p. 054010$$n5$$p054010$$tPhysical review applied$$v5$$x2331-7019$$y2016
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