000811684 001__ 811684
000811684 005__ 20210129223914.0
000811684 0247_ $$2doi$$a10.1002/aelm.201500460
000811684 0247_ $$2WOS$$aWOS:000379912100006
000811684 037__ $$aFZJ-2016-04068
000811684 082__ $$a621.3
000811684 1001_ $$0P:(DE-Juel1)140272$$aHeedt, Sebastian$$b0$$eCorresponding author$$ufzj
000811684 245__ $$aElectronic Properties of Complex Self-Assembled InAs Nanowire Networks
000811684 260__ $$aChichester$$bWiley$$c2016
000811684 3367_ $$2DRIVER$$aarticle
000811684 3367_ $$2DataCite$$aOutput Types/Journal article
000811684 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1470054957_28380
000811684 3367_ $$2BibTeX$$aARTICLE
000811684 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000811684 3367_ $$00$$2EndNote$$aJournal Article
000811684 520__ $$aElectrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic temperatures. The cross configuration is utilized to compare transport properties extracted from the Hall effect and field-effect transistor characterizations.
000811684 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000811684 588__ $$aDataset connected to CrossRef
000811684 7001_ $$0P:(DE-HGF)0$$aVakulov, Daniil$$b1
000811684 7001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b2$$ufzj
000811684 7001_ $$0P:(DE-Juel1)167347$$aRosenbach, Daniel$$b3$$ufzj
000811684 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b4
000811684 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5$$ufzj
000811684 7001_ $$0P:(DE-Juel1)128603$$aLepsa, Mihail Ion$$b6$$ufzj
000811684 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b7$$ufzj
000811684 773__ $$0PERI:(DE-600)2810904-1$$a10.1002/aelm.201500460$$gVol. 2, no. 6, p. 1500460 -$$n6$$p1500460 -$$tAdvanced Electronic Materials$$v2$$x2199-160X$$y2016
000811684 8564_ $$uhttps://juser.fz-juelich.de/record/811684/files/Heedt_et_al-2016-Advanced_Electronic_Materials.pdf$$yRestricted
000811684 8564_ $$uhttps://juser.fz-juelich.de/record/811684/files/Heedt_et_al-2016-Advanced_Electronic_Materials.gif?subformat=icon$$xicon$$yRestricted
000811684 8564_ $$uhttps://juser.fz-juelich.de/record/811684/files/Heedt_et_al-2016-Advanced_Electronic_Materials.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000811684 8564_ $$uhttps://juser.fz-juelich.de/record/811684/files/Heedt_et_al-2016-Advanced_Electronic_Materials.jpg?subformat=icon-180$$xicon-180$$yRestricted
000811684 8564_ $$uhttps://juser.fz-juelich.de/record/811684/files/Heedt_et_al-2016-Advanced_Electronic_Materials.jpg?subformat=icon-640$$xicon-640$$yRestricted
000811684 8564_ $$uhttps://juser.fz-juelich.de/record/811684/files/Heedt_et_al-2016-Advanced_Electronic_Materials.pdf?subformat=pdfa$$xpdfa$$yRestricted
000811684 909CO $$ooai:juser.fz-juelich.de:811684$$pVDB
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)140272$$aForschungszentrum Jülich$$b0$$kFZJ
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165897$$aForschungszentrum Jülich$$b1$$kFZJ
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)141766$$aForschungszentrum Jülich$$b2$$kFZJ
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)167347$$aForschungszentrum Jülich$$b3$$kFZJ
000811684 9101_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$6P:(DE-Juel1)128856$$aPGI-8-PT$$b4$$kPGI-8-PT
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b5$$kFZJ
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128603$$aForschungszentrum Jülich$$b6$$kFZJ
000811684 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich$$b7$$kFZJ
000811684 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000811684 9141_ $$y2016
000811684 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000811684 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000811684 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000811684 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000811684 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000811684 920__ $$lyes
000811684 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000811684 980__ $$ajournal
000811684 980__ $$aVDB
000811684 980__ $$aUNRESTRICTED
000811684 980__ $$aI:(DE-Juel1)PGI-9-20110106