TY  - JOUR
AU  - Heedt, Sebastian
AU  - Vakulov, Daniil
AU  - Rieger, Torsten
AU  - Rosenbach, Daniel
AU  - Trellenkamp, Stefan
AU  - Grützmacher, Detlev
AU  - Lepsa, Mihail Ion
AU  - Schäpers, Thomas
TI  - Electronic Properties of Complex Self-Assembled InAs Nanowire Networks
JO  - Advanced Electronic Materials
VL  - 2
IS  - 6
SN  - 2199-160X
CY  - Chichester
PB  - Wiley
M1  - FZJ-2016-04068
SP  - 1500460 -
PY  - 2016
AB  - Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single-crystalline zinc blende regions form at the L- and T-shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic temperatures. The cross configuration is utilized to compare transport properties extracted from the Hall effect and field-effect transistor characterizations.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000379912100006
DO  - DOI:10.1002/aelm.201500460
UR  - https://juser.fz-juelich.de/record/811684
ER  -