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@ARTICLE{Heedt:811684,
author = {Heedt, Sebastian and Vakulov, Daniil and Rieger, Torsten
and Rosenbach, Daniel and Trellenkamp, Stefan and
Grützmacher, Detlev and Lepsa, Mihail Ion and Schäpers,
Thomas},
title = {{E}lectronic {P}roperties of {C}omplex {S}elf-{A}ssembled
{I}n{A}s {N}anowire {N}etworks},
journal = {Advanced Electronic Materials},
volume = {2},
number = {6},
issn = {2199-160X},
address = {Chichester},
publisher = {Wiley},
reportid = {FZJ-2016-04068},
pages = {1500460 -},
year = {2016},
abstract = {Electrical transport in epitaxially merged InAs nanowire
junctions and nanowire networks is investigated.
Single-crystalline zinc blende regions form at the L- and
T-shaped nanowire links. The impact of the junction regions
on electrical transport is examined at room temperature and
at cryogenic temperatures. The cross configuration is
utilized to compare transport properties extracted from the
Hall effect and field-effect transistor characterizations.},
cin = {PGI-9},
ddc = {621.3},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000379912100006},
doi = {10.1002/aelm.201500460},
url = {https://juser.fz-juelich.de/record/811684},
}