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@ARTICLE{Rieger:811687,
      author       = {Rieger, Torsten and Rosenbach, Daniel and Vakulov, Daniil
                      and Heedt, Sebastian and Schäpers, Thomas and Grützmacher,
                      Detlev and Lepsa, Mihail Ion},
      title        = {{C}rystal {P}hase {T}ransformation in {S}elf-{A}ssembled
                      {I}n{A}s {N}anowire {J}unctions on {P}atterned {S}i
                      {S}ubstrates},
      journal      = {Nano letters},
      volume       = {16},
      number       = {3},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2016-04071},
      pages        = {1933 - 1941},
      year         = {2016},
      abstract     = {We demonstrate the growth and structural characteristics of
                      InAs nanowire junctions evidencing a transformation of the
                      crystalline structure. The junctions are obtained without
                      the use of catalyst particles. Morphological investigations
                      of the junctions reveal three structures having an L-, T-,
                      and X-shape. The formation mechanisms of these structures
                      have been identified. The NW junctions reveal large sections
                      of zinc blende crystal structure free of extended defects,
                      despite the high stacking fault density obtained in
                      individual InAs nanowires. This segment of zinc blende
                      crystal structure in the junction is associated with a
                      crystal phase transformation involving sets of Shockley
                      partial dislocations; the transformation takes place solely
                      in the crystal phase. A model is developed to demonstrate
                      that only the zinc blende phase with the same orientation as
                      the substrate can result in monocrystalline junctions. The
                      suitability of the junctions to be used in nanoelectronic
                      devices is confirmed by room-temperature electrical
                      experiments.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000371946300061},
      doi          = {10.1021/acs.nanolett.5b05157},
      url          = {https://juser.fz-juelich.de/record/811687},
}