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@ARTICLE{Kampmeier:811699,
      author       = {Kampmeier, Jörn and Weyrich, Christian and Lanius, Martin
                      and Schall, Melissa and Neumann, Elmar and Mussler, Gregor
                      and Schäpers, Thomas and Grützmacher, Detlev},
      title        = {{S}elective area growth of {B}i$_{2}${T}e$_{3}$ and
                      {S}b$_{2}${T}e$_{3}$ topological insulator thin films},
      journal      = {Journal of crystal growth},
      volume       = {443},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-04083},
      pages        = {38 - 42},
      year         = {2016},
      abstract     = {The intrinsic bulk behavior of topological insulators (TI)
                      is a key issue for their employment in future device
                      applications. State of the art TIs predominantly suffer from
                      large bulk charge carrier concentrations that mask their
                      extraordinary surface states. In this paper we present the
                      selective area growth of Bi2Te3 and Sb2Te3 TI thin films on
                      prestructured Si(111) Si on insulator (SOI) substrates,
                      paving the way to high quality TI nanostructures in which
                      access to surface states is enhanced. Therefore high quality
                      Bi2Te3 and Sb2Te3 thin films were deposited by means of
                      solid source molecular beam epitaxy (MBE) and subsequently
                      investigated by energy dispersive x-ray spectroscopy (EDX).
                      To investigate the transport properties of the selectively
                      grown thin films, magnetotransport measurements were
                      performed at low temperatures. Nucleation in the SiO2
                      valleys next to the prepatterned Si(111) mesa structures was
                      not observed. The structural and morphological qualities of
                      crystals deposited on untreated Si(111) SOI wafers are
                      completely preserved by employing the selective area growth
                      on prepatterned substrates. The transport characteristics of
                      the selectively-grown TI systems are comparable to those of
                      the analogous postpatterned films.},
      cin          = {PGI-9},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000375507500007},
      doi          = {10.1016/j.jcrysgro.2016.03.012},
      url          = {https://juser.fz-juelich.de/record/811699},
}