Journal Article FZJ-2016-04084

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Correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs wires measured with scanning gate microscopy

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2015
Springer Heidelberg [u.a.]

JETP letters 101(9), 628 - 632 () [10.1134/S0021364015090143]

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Abstract: We investigate the correlations of the mutual positions of the nodes of charge density waves in side-by-side placed InAs nanowires in presence of a conductive atomic force microscope tip served as a mobile gate at helium temperatures. Scanning gate microscopy scans demonstrate mutual correlation of positions of charge density waves nodes of two wires. A general mutual shift of the nodes positions and “crystal lattice mismatch” defect were observed. These observations demonstrate the crucial role of Coulomb interaction in formation of charge density waves in InAs nanowires.

Keyword(s): Condensed Matter Physics (2nd)

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016
Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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 Record created 2016-07-29, last modified 2021-01-29


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