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@ARTICLE{Aeberhard:811808,
      author       = {Aeberhard, Urs and Czaja, Philippe and Ermes, Markus and
                      Pieters, Bart and Chistiakova, Ganna and Bittkau, Karsten
                      and Richter, Alexei and Ding, Kaining and Giusepponi, Simone
                      and Celino, Massimo},
      title        = {{T}owards a {M}ulti-scale {A}pproach to the {S}imulation of
                      {S}ilicon {H}etero-junction {S}olar {C}ells},
      journal      = {Journal of Green Engineering},
      volume       = {5},
      number       = {4},
      issn         = {1904-4720},
      address      = {Gistrup},
      publisher    = {River Publishers},
      reportid     = {FZJ-2016-04159},
      pages        = {11 - 32},
      year         = {2016},
      abstract     = {The silicon hetero-junction (SHJ) technology holds the
                      current efficiency record of $25.6\%$ for silicon-based
                      single junction solar cells and shows great potential to
                      become a future industrial standard for high-efficiency
                      crystalline silicon (c-Si) cells. One of the main advantages
                      of this concept over other wafer based silicon technologies
                      are the very high open-circuit voltages that can be achieved
                      thanks to the passivation of contacts by thin films of
                      hydrogenated amorphous silicon (a-Si:H). The a-Si:H/c-Si
                      interface, while central to the technology, is still not
                      fully understood in terms of transport and recombination
                      across this nanoscale region, especially concerning the role
                      of the different localized tail and defect states in the
                      a-Si:H and at the a-Si:H/c-Si interface and of the band
                      offsets and band bending induced by the heterostructure
                      potential and the large doping, respectively. For instance,
                      a consistent microscopic picture of transport and
                      recombination processes with treatment of thermal and
                      tunneling mechanisms on equal footing is lacking. On the
                      other hand, there are new SHJ device architectures like thin
                      wafers with light trapping structures [1] or interdigitated
                      back contact (IBC) cells [2], which define additional
                      requirements for the modelling approach concerning the
                      integration of 3D optical and electrical simulations. This
                      paper provides an overview over our current efforts in the
                      creation of a multi-scale and multi-physics framework to
                      deal with the challenges encountered in the simulation of
                      SHJ solar cells.},
      cin          = {IEK-5 / JARA-HPC},
      ddc          = {333.7},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / $I:(DE-82)080012_20140620$},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406) / Ab-initio
                      description of transport and recombination at defective
                      interfaces in solar cells $(jiek50_20141101)$},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406 /
                      $G:(DE-Juel1)jiek50_20141101$},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.13052/jge1904-4720.5342},
      url          = {https://juser.fz-juelich.de/record/811808},
}