Hauptseite > Publikationsdatenbank > How to accomplish (quasi) in-situ neutron reflectivity measurements on ultrathin magnetic films > print |
001 | 811981 | ||
005 | 20210129223956.0 | ||
037 | _ | _ | |a FZJ-2016-04282 |
041 | _ | _ | |a English |
100 | 1 | _ | |a Pütter, Sabine |0 P:(DE-Juel1)142052 |b 0 |e Corresponding author |u fzj |
111 | 2 | _ | |a Frühjahrstagung der Deutschen Physikalischen Gesellschaft |g DPG |c Regensburg |d 2016-03-06 - 2016-03-11 |w Germany |
245 | _ | _ | |a How to accomplish (quasi) in-situ neutron reflectivity measurements on ultrathin magnetic films |
260 | _ | _ | |c 2016 |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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520 | _ | _ | |a The investigation of ultrathin films which are sensitive to ambient air at large scale instruments is a challenge as the capabilities for on-site growth UHV chambers to measure in-situ are often limited, mostly due to lacking space. A common solution is the use of protecting cap layers on top of the films. However they might change the physical properties of the sample.Our solution is a handy mini UHV-chamber which is used for sample transfer and quasi in-situ measurements at the neutron reflectivity instrument MARIA of the Jülich Centre for Neutron Science at MLZ in Garching. The samples are prepared in the adjacent thin film laboratory by molecular beam epitaxy and moved into the compact chamber for transfer. It is equipped with sapphire windows, an SAES getter pump and a wobble stick, which serves also as a sample holder for samples of up to 1.4~cm$^2$. The pressure in the transfer chamber is kept below $10^{-9}$ mbar. Neutron reflectivity measurements can be performed at room temperature in magnetic fields of up to 600~mT. We present first polarized neutron reflectivity measurements on Co thin films at room temperature in a magnetic field of 300 mT in the Q-range up to 0.2 \AA$^{-1}$. |
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693 | _ | _ | |a Forschungs-Neutronenquelle Heinz Maier-Leibnitz |e MARIA: Magnetic reflectometer with high incident angle |f NL5N |1 EXP:(DE-MLZ)FRMII-20140101 |0 EXP:(DE-MLZ)MARIA-20140101 |5 EXP:(DE-MLZ)MARIA-20140101 |6 EXP:(DE-MLZ)NL5N-20140101 |x 0 |
693 | _ | _ | |0 EXP:(DE-MLZ)MBE-MLZ-20151210 |5 EXP:(DE-MLZ)MBE-MLZ-20151210 |e MBE-MLZ: Molecular Beam Epitaxy at MLZ |x 1 |
700 | 1 | _ | |a Syed Mohd, Amir |0 P:(DE-Juel1)159309 |b 1 |u fzj |
700 | 1 | _ | |a Mattauch, Stefan |0 P:(DE-Juel1)130821 |b 2 |u fzj |
700 | 1 | _ | |a Koutsioumpas, Alexandros |0 P:(DE-Juel1)158075 |b 3 |u fzj |
700 | 1 | _ | |a Schneider, Harald |0 P:(DE-Juel1)130950 |b 4 |
700 | 1 | _ | |a Brückel, Thomas |0 P:(DE-Juel1)130572 |b 5 |u fzj |
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