% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Stange:811990,
      author       = {Stange, Daniela and Wirths, Stephan and Geiger, Richard and
                      Schulte-Braucks, Christian and Marzban, Bahareh and von den
                      Driesch, Nils and Mussler, Gregor and Zabel, Thomas and
                      Stoica, Toma and Hartmann, Jean-Michel and Mantl, Siegfried
                      and Ikonic, Zoran and Grützmacher, Detlev and Sigg, Hans
                      and Witzens, Jeremy and Buca, Dan Mihai},
      title        = {{O}ptically {P}umped {G}e{S}n {M}icrodisk {L}asers on {S}i},
      journal      = {ACS photonics},
      volume       = {3},
      number       = {7},
      issn         = {2330-4022},
      address      = {Washington, DC},
      publisher    = {ACS},
      reportid     = {FZJ-2016-04291},
      pages        = {1279 - 1285},
      year         = {2016},
      abstract     = {The strong correlation between advancing the performance of
                      Si microelectronics and their demand of low power
                      consumption requires new ways of data communication.
                      Photonic circuits on Si are already highly developed except
                      for an eligible on-chip laser source integrated
                      monolithically. The recent demonstration of an optically
                      pumped waveguide laser made from the Si-congruent GeSn
                      alloy, monolithical laser integration has taken a big step
                      forward on the way to an all-inclusive nanophotonic platform
                      in CMOS. We present group IV microdisk lasers with
                      significant improvements in lasing temperature and lasing
                      threshold compared to the previously reported nonundercut
                      Fabry–Perot type lasers. Lasing is observed up to 130 K
                      with optical excitation density threshold of 220 kW/cm2 at
                      50 K. Additionally the influence of strain relaxation on the
                      band structure of undercut resonators is discussed and
                      allows the proof of laser emission for a just direct
                      Ge0.915Sn0.085 alloy where Γ and L valleys have the same
                      energies. Moreover, the observed cavity modes are identified
                      and modeled.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000380297200020},
      doi          = {10.1021/acsphotonics.6b00258},
      url          = {https://juser.fz-juelich.de/record/811990},
}