000812032 001__ 812032
000812032 005__ 20210129224007.0
000812032 0247_ $$2doi$$a10.1088/2053-1583/3/2/025037
000812032 0247_ $$2WOS$$aWOS:000378571400057
000812032 037__ $$aFZJ-2016-04328
000812032 082__ $$a530
000812032 1001_ $$0P:(DE-Juel1)159381$$aNiu, Chengwang$$b0$$eCorresponding author$$ufzj
000812032 245__ $$aTwo-dimensional topological crystalline insulator phase in quantum wells of trivial insulators
000812032 260__ $$aBristol$$bIOP Publ.$$c2016
000812032 3367_ $$2DRIVER$$aarticle
000812032 3367_ $$2DataCite$$aOutput Types/Journal article
000812032 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1489839434_32579
000812032 3367_ $$2BibTeX$$aARTICLE
000812032 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000812032 3367_ $$00$$2EndNote$$aJournal Article
000812032 520__ $$aThe realization of two-dimensional (2D) topological insulators (TIs) in HgTe/CdTe quantum wells (QWs) has generated an explosion of research on TIs and novel topologically nontrivial phases. Here we predict, based on first-principles calculations, that the newly discovered 2D topological crystalline insulators (TCIs) phase exists even in the QWs of trivial insulators, e.g. (Sn/Pb)Te and Na(Cl/Br), with mirror Chern number ${n}_{{\rm{M}}}=-2$. Tunable nontrivial energy gaps ranging from 4 to 238 meV are obtained, guaranteeing further room-temperature observations and applications. The combined effect of strain and electrostatic interaction that can be engineered by the cladding layers leads to a band inversion, resulting in the phase transition from trivial insulator to 2D TCIs. Our work provides a new strategy for engineering topological states in 2D materials.
000812032 536__ $$0G:(DE-HGF)POF3-142$$a142 - Controlling Spin-Based Phenomena (POF3-142)$$cPOF3-142$$fPOF III$$x0
000812032 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x1
000812032 536__ $$0G:(DE-Juel1)jiff13_20131101$$aMagnetic Anisotropy of Metallic Layered Systems and Nanostructures (jiff13_20131101)$$cjiff13_20131101$$fMagnetic Anisotropy of Metallic Layered Systems and Nanostructures$$x2
000812032 588__ $$aDataset connected to CrossRef
000812032 7001_ $$0P:(DE-Juel1)161204$$aBuhl, Patrick$$b1$$ufzj
000812032 7001_ $$0P:(DE-Juel1)130545$$aBihlmayer, Gustav$$b2
000812032 7001_ $$0P:(DE-Juel1)131042$$aWortmann, Daniel$$b3$$ufzj
000812032 7001_ $$0P:(DE-Juel1)130548$$aBlügel, Stefan$$b4$$ufzj
000812032 7001_ $$0P:(DE-Juel1)130848$$aMokrousov, Yuriy$$b5$$ufzj
000812032 773__ $$0PERI:(DE-600)2779376-X$$a10.1088/2053-1583/3/2/025037$$gVol. 3, no. 2, p. 025037 -$$n2$$p025037$$t2D Materials$$v3$$x2053-1583$$y2016
000812032 8564_ $$uhttps://juser.fz-juelich.de/record/812032/files/2dm_3_2_025037.pdf$$yRestricted
000812032 8564_ $$uhttps://juser.fz-juelich.de/record/812032/files/2dm_3_2_025037.pdf?subformat=pdfa$$xpdfa$$yRestricted
000812032 909CO $$ooai:juser.fz-juelich.de:812032$$pVDB
000812032 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000812032 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$b2D MATER : 2015
000812032 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000812032 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$b2D MATER : 2015
000812032 9141_ $$y2016
000812032 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)159381$$aForschungszentrum Jülich$$b0$$kFZJ
000812032 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161204$$aForschungszentrum Jülich$$b1$$kFZJ
000812032 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130545$$aForschungszentrum Jülich$$b2$$kFZJ
000812032 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131042$$aForschungszentrum Jülich$$b3$$kFZJ
000812032 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130548$$aForschungszentrum Jülich$$b4$$kFZJ
000812032 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130848$$aForschungszentrum Jülich$$b5$$kFZJ
000812032 9131_ $$0G:(DE-HGF)POF3-142$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000812032 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x1
000812032 920__ $$lyes
000812032 9201_ $$0I:(DE-Juel1)IAS-1-20090406$$kIAS-1$$lQuanten-Theorie der Materialien$$x0
000812032 9201_ $$0I:(DE-Juel1)PGI-1-20110106$$kPGI-1$$lQuanten-Theorie der Materialien$$x1
000812032 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x2
000812032 9201_ $$0I:(DE-82)080012_20140620$$kJARA-HPC$$lJARA - HPC$$x3
000812032 980__ $$ajournal
000812032 980__ $$aVDB
000812032 980__ $$aI:(DE-Juel1)IAS-1-20090406
000812032 980__ $$aI:(DE-Juel1)PGI-1-20110106
000812032 980__ $$aI:(DE-82)080009_20140620
000812032 980__ $$aI:(DE-82)080012_20140620
000812032 980__ $$aUNRESTRICTED
000812032 981__ $$aI:(DE-Juel1)PGI-1-20110106