% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Niu:812032,
      author       = {Niu, Chengwang and Buhl, Patrick and Bihlmayer, Gustav and
                      Wortmann, Daniel and Blügel, Stefan and Mokrousov, Yuriy},
      title        = {{T}wo-dimensional topological crystalline insulator phase
                      in quantum wells of trivial insulators},
      journal      = {2D Materials},
      volume       = {3},
      number       = {2},
      issn         = {2053-1583},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2016-04328},
      pages        = {025037},
      year         = {2016},
      abstract     = {The realization of two-dimensional (2D) topological
                      insulators (TIs) in HgTe/CdTe quantum wells (QWs) has
                      generated an explosion of research on TIs and novel
                      topologically nontrivial phases. Here we predict, based on
                      first-principles calculations, that the newly discovered 2D
                      topological crystalline insulators (TCIs) phase exists even
                      in the QWs of trivial insulators, e.g. (Sn/Pb)Te and
                      Na(Cl/Br), with mirror Chern number ${n}_{{\rm{M}}}=-2$.
                      Tunable nontrivial energy gaps ranging from 4 to 238 meV are
                      obtained, guaranteeing further room-temperature observations
                      and applications. The combined effect of strain and
                      electrostatic interaction that can be engineered by the
                      cladding layers leads to a band inversion, resulting in the
                      phase transition from trivial insulator to 2D TCIs. Our work
                      provides a new strategy for engineering topological states
                      in 2D materials.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143) /
                      Magnetic Anisotropy of Metallic Layered Systems and
                      Nanostructures $(jiff13_20131101)$},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143 /
                      $G:(DE-Juel1)jiff13_20131101$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000378571400057},
      doi          = {10.1088/2053-1583/3/2/025037},
      url          = {https://juser.fz-juelich.de/record/812032},
}