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000008124 1001_ $$0P:(DE-HGF)0$$aAmekura, H.$$b0
000008124 245__ $$aMelting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances
000008124 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000008124 300__ $$a023110
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000008124 440_0 $$0562$$aApplied Physics Letters$$v96$$x0003-6951
000008124 500__ $$aA part of this study was granted from The Murata Science Foundation. The authors thank the staffs of BL15XU, NIMS, and of SPring-8 for their help at the beamline. The GIXRD measurements at HT were performed under the approval of NIMS Beamline Station (Proposal Nos. 2006B4501, 2007A4501, and 2007B4502).
000008124 520__ $$aZn nanoparticles at room temperature show two absorption peaks in the near-infrared (NIR) and the ultraviolet (UV) regions, both of which satisfy the criterion of surface plasmon resonance (SPR). From x-ray diffraction at high temperatures, it was found that the Zn nanoparticles in SiO2 melt at 360-420 degrees C and solidify at 250-310 degrees C with a large temperature hysteresis. While the NIR peak disappears with melting, the UV peak shows sudden energy shift with melting but survives even after the melting. The first-principle band calculation ascribes the UV and NIR peaks to SPR-enhanced inter- and intraband transitions, respectively.
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000008124 65320 $$2Author$$aab initio calculations
000008124 65320 $$2Author$$ainfrared spectra
000008124 65320 $$2Author$$amelting
000008124 65320 $$2Author$$ananoparticles
000008124 65320 $$2Author$$asilicon compounds
000008124 65320 $$2Author$$asolidification
000008124 65320 $$2Author$$asurface plasmon resonance
000008124 65320 $$2Author$$aultraviolet spectra
000008124 65320 $$2Author$$aX-ray diffraction
000008124 65320 $$2Author$$azinc
000008124 7001_ $$0P:(DE-HGF)0$$aTanaka, M.$$b1
000008124 7001_ $$0P:(DE-HGF)0$$aKatsuya, Y.$$b2
000008124 7001_ $$0P:(DE-HGF)0$$aYoshikawa, H.$$b3
000008124 7001_ $$0P:(DE-HGF)0$$aShinotsuka, H.$$b4
000008124 7001_ $$0P:(DE-HGF)0$$aTanuma, S.$$b5
000008124 7001_ $$0P:(DE-HGF)0$$aOhnuma, M.$$b6
000008124 7001_ $$0P:(DE-HGF)0$$aMatsushita, Y.$$b7
000008124 7001_ $$0P:(DE-HGF)0$$aKobayashi, K.$$b8
000008124 7001_ $$0P:(DE-Juel1)VDB14557$$aBuchal, Ch.$$b9$$uFZJ
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000008124 7001_ $$0P:(DE-HGF)0$$aKishimoto, N.$$b11
000008124 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.3290984$$gVol. 96, p. 023110$$p023110$$q96<023110$$tApplied physics letters$$v96$$x0003-6951$$y2010
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