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@ARTICLE{Amekura:8124,
      author       = {Amekura, H. and Tanaka, M. and Katsuya, Y. and Yoshikawa,
                      H. and Shinotsuka, H. and Tanuma, S. and Ohnuma, M. and
                      Matsushita, Y. and Kobayashi, K. and Buchal, Ch. and Mantl,
                      S. and Kishimoto, N.},
      title        = {{M}elting of {Z}n nanoparticles embedded in {S}i{O}2 at
                      high temperatures: {E}ffects on surface plasmon resonances},
      journal      = {Applied physics letters},
      volume       = {96},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-8124},
      pages        = {023110},
      year         = {2010},
      note         = {A part of this study was granted from The Murata Science
                      Foundation. The authors thank the staffs of BL15XU, NIMS,
                      and of SPring-8 for their help at the beamline. The GIXRD
                      measurements at HT were performed under the approval of NIMS
                      Beamline Station (Proposal Nos. 2006B4501, 2007A4501, and
                      2007B4502).},
      abstract     = {Zn nanoparticles at room temperature show two absorption
                      peaks in the near-infrared (NIR) and the ultraviolet (UV)
                      regions, both of which satisfy the criterion of surface
                      plasmon resonance (SPR). From x-ray diffraction at high
                      temperatures, it was found that the Zn nanoparticles in SiO2
                      melt at 360-420 degrees C and solidify at 250-310 degrees C
                      with a large temperature hysteresis. While the NIR peak
                      disappears with melting, the UV peak shows sudden energy
                      shift with melting but survives even after the melting. The
                      first-principle band calculation ascribes the UV and NIR
                      peaks to SPR-enhanced inter- and intraband transitions,
                      respectively.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000273689400057},
      doi          = {10.1063/1.3290984},
      url          = {https://juser.fz-juelich.de/record/8124},
}