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024 | 7 | _ | |a 10.1063/1.3290984 |2 DOI |
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084 | _ | _ | |2 WoS |a Physics, Applied |
100 | 1 | _ | |a Amekura, H. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances |
260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
300 | _ | _ | |a 023110 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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336 | 7 | _ | |a article |2 DRIVER |
440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |v 96 |
500 | _ | _ | |a A part of this study was granted from The Murata Science Foundation. The authors thank the staffs of BL15XU, NIMS, and of SPring-8 for their help at the beamline. The GIXRD measurements at HT were performed under the approval of NIMS Beamline Station (Proposal Nos. 2006B4501, 2007A4501, and 2007B4502). |
520 | _ | _ | |a Zn nanoparticles at room temperature show two absorption peaks in the near-infrared (NIR) and the ultraviolet (UV) regions, both of which satisfy the criterion of surface plasmon resonance (SPR). From x-ray diffraction at high temperatures, it was found that the Zn nanoparticles in SiO2 melt at 360-420 degrees C and solidify at 250-310 degrees C with a large temperature hysteresis. While the NIR peak disappears with melting, the UV peak shows sudden energy shift with melting but survives even after the melting. The first-principle band calculation ascribes the UV and NIR peaks to SPR-enhanced inter- and intraband transitions, respectively. |
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653 | 2 | 0 | |2 Author |a ab initio calculations |
653 | 2 | 0 | |2 Author |a infrared spectra |
653 | 2 | 0 | |2 Author |a melting |
653 | 2 | 0 | |2 Author |a nanoparticles |
653 | 2 | 0 | |2 Author |a silicon compounds |
653 | 2 | 0 | |2 Author |a solidification |
653 | 2 | 0 | |2 Author |a surface plasmon resonance |
653 | 2 | 0 | |2 Author |a ultraviolet spectra |
653 | 2 | 0 | |2 Author |a X-ray diffraction |
653 | 2 | 0 | |2 Author |a zinc |
700 | 1 | _ | |a Tanaka, M. |b 1 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Katsuya, Y. |b 2 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Yoshikawa, H. |b 3 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Shinotsuka, H. |b 4 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Tanuma, S. |b 5 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Ohnuma, M. |b 6 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Matsushita, Y. |b 7 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Kobayashi, K. |b 8 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Buchal, Ch. |b 9 |u FZJ |0 P:(DE-Juel1)VDB14557 |
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700 | 1 | _ | |a Kishimoto, N. |b 11 |0 P:(DE-HGF)0 |
773 | _ | _ | |a 10.1063/1.3290984 |g Vol. 96, p. 023110 |p 023110 |q 96<023110 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 96 |y 2010 |x 0003-6951 |
856 | 7 | _ | |u http://dx.doi.org/10.1063/1.3290984 |
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