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024 7 _ |a 10.1063/1.3290984
|2 DOI
024 7 _ |a WOS:000273689400057
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024 7 _ |a 2128/17337
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037 _ _ |a PreJuSER-8124
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Amekura, H.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2010
300 _ _ |a 023110
336 7 _ |a Journal Article
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336 7 _ |a JOURNAL_ARTICLE
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 96
500 _ _ |a A part of this study was granted from The Murata Science Foundation. The authors thank the staffs of BL15XU, NIMS, and of SPring-8 for their help at the beamline. The GIXRD measurements at HT were performed under the approval of NIMS Beamline Station (Proposal Nos. 2006B4501, 2007A4501, and 2007B4502).
520 _ _ |a Zn nanoparticles at room temperature show two absorption peaks in the near-infrared (NIR) and the ultraviolet (UV) regions, both of which satisfy the criterion of surface plasmon resonance (SPR). From x-ray diffraction at high temperatures, it was found that the Zn nanoparticles in SiO2 melt at 360-420 degrees C and solidify at 250-310 degrees C with a large temperature hysteresis. While the NIR peak disappears with melting, the UV peak shows sudden energy shift with melting but survives even after the melting. The first-principle band calculation ascribes the UV and NIR peaks to SPR-enhanced inter- and intraband transitions, respectively.
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653 2 0 |2 Author
|a ab initio calculations
653 2 0 |2 Author
|a infrared spectra
653 2 0 |2 Author
|a melting
653 2 0 |2 Author
|a nanoparticles
653 2 0 |2 Author
|a silicon compounds
653 2 0 |2 Author
|a solidification
653 2 0 |2 Author
|a surface plasmon resonance
653 2 0 |2 Author
|a ultraviolet spectra
653 2 0 |2 Author
|a X-ray diffraction
653 2 0 |2 Author
|a zinc
700 1 _ |a Tanaka, M.
|b 1
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700 1 _ |a Katsuya, Y.
|b 2
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700 1 _ |a Yoshikawa, H.
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700 1 _ |a Shinotsuka, H.
|b 4
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700 1 _ |a Tanuma, S.
|b 5
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700 1 _ |a Ohnuma, M.
|b 6
|0 P:(DE-HGF)0
700 1 _ |a Matsushita, Y.
|b 7
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700 1 _ |a Kobayashi, K.
|b 8
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700 1 _ |a Buchal, Ch.
|b 9
|u FZJ
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700 1 _ |a Mantl, S.
|b 10
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700 1 _ |a Kishimoto, N.
|b 11
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773 _ _ |a 10.1063/1.3290984
|g Vol. 96, p. 023110
|p 023110
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|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 96
|y 2010
|x 0003-6951
856 7 _ |u http://dx.doi.org/10.1063/1.3290984
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