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@ARTICLE{Dashjav:818231,
      author       = {Dashjav, E. and Lipińska-Chwałek, M. and Grüner, D. and
                      Mauer, G. and Luysberg, M. and Tietz, F.},
      title        = {{A}tomic layer deposition and high-resolution electron
                      microscopy characterization of nickel nanoparticles for
                      catalyst applications},
      journal      = {Surface and coatings technology},
      volume       = {307},
      issn         = {0257-8972},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2016-04714},
      pages        = {428-435},
      year         = {2016},
      abstract     = {Ni nanoparticles (diameter < 10 nm) are deposited on Si and
                      ceramic substrates of porous lanthanum-substituted strontium
                      titanate/yttrium-stabilized zirconia (LST/YSZ) composites by
                      a two-step process. First, NiO films are produced by atomic
                      layer deposition at 200 °C using
                      bis(methylcyclopentadienyl)nickel(II) (Ni(MeCp)2) and H2O as
                      precursors. In the second step, the NiO films are reduced in
                      H2 atmosphere at 400–800 °C. The size of the resulting Ni
                      nanoparticles is controlled by the temperature. The largest
                      particles with a diameter of about 7 nm are obtained at 800
                      °C. NiO film and Ni nanoparticles deposited on Si
                      substrates are characterized by high-resolution electron
                      microscopy. It was found that the Ni(MeCp)2 precursor reacts
                      with the substrate, leading to the formation of NiSi2
                      precipitates beneath the surface of the Si wafer and
                      amorphization of the surrounding area, resulting in a 10 nm
                      thick top layer of the Si wafer. After reductive annealing,
                      NiSi2 precipitates are preserved but Si recrystallizes and
                      the amorphous NiO film transforms into crystalline Ni
                      nanoparticles well distributed on the wafer surface. Process
                      parameters were optimized for Si substrates and transfer of
                      the process to ceramic LST/YSZ substrates is possible in
                      principle. However, a much higher number of ALD cycles (1200
                      compared to 100 for Si) are necessary to obtain Ni
                      nanoparticles of similar size and the number density of
                      particles is lower than observed for Si substrates.},
      cin          = {IEK-1 / IEK-2 / PGI-5},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-1-20101013 / I:(DE-Juel1)IEK-2-20101013 /
                      I:(DE-Juel1)PGI-5-20110106},
      pnm          = {134 - Electrolysis and Hydrogen (POF3-134)},
      pid          = {G:(DE-HGF)POF3-134},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000390622200051},
      doi          = {10.1016/j.surfcoat.2016.08.074},
      url          = {https://juser.fz-juelich.de/record/818231},
}