TY  - JOUR
AU  - Stange, D.
AU  - von den Driesch, N.
AU  - Rainko, D.
AU  - Schulte-Braucks, C.
AU  - Wirths, S.
AU  - Mussler, G.
AU  - Tiedemann, Andreas
AU  - Stoica, T.
AU  - Hartmann, J. M.
AU  - Ikonic, Z.
AU  - Mantl, S.
AU  - Grützmacher, D.
AU  - Buca, D.
TI  - Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
JO  - Optics express
VL  - 24
IS  - 2
SN  - 1094-4087
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2016-04719
SP  - 1358
PY  - 2016
AB  - We present results on CVD growth and electro-optical characterization of Ge0.92Sn0.08/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn active layers in different LED geometries, such as double heterostructures and multi quantum wells is discussed based on electroluminescence data. Theoretical calculations by effective mass and 6 band k∙p method reveal low barrier heights for this specific structure. Best configurations offer only a maximum barrier height for electrons of about 40 meV at the Γ point at room temperature (e.g. 300 K), evidently insufficient for proper light emitting devices. An alternative solution using SiGeSn as barrier material is introduced, which provides appropriate band alignment for both electrons and holes resulting in efficient confinement in direct bandgap GeSn wells. Finally, epitaxial growth of such a complete SiGeSn/GeSn/SiGeSn double heterostructure including doping is shown.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000369066300099
DO  - DOI:10.1364/OE.24.001358
UR  - https://juser.fz-juelich.de/record/818241
ER  -