TY  - JOUR
AU  - Baeumer, Christoph
AU  - Schmitz, Christoph
AU  - Marchewka, Astrid
AU  - Valenta, Richard
AU  - Hackl, Johanna
AU  - Raab, Nicolas
AU  - Rogers, Steven P.
AU  - Khan, M. Imtiaz
AU  - Nemsak, Slavomir
AU  - Shim, Moonsub
AU  - Menzel, Stephan
AU  - Schneider, Claus Michael
AU  - Waser, R.
AU  - Müller, David
AU  - Dittmann, Regina
TI  - Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
JO  - Nature Communications
VL  - 7
SN  - 2041-1723
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2016-05004
SP  - 12398 -
PY  - 2016
AB  - The continuing revolutionary success of mobile computing and smart devices calls for the development of novel, cost- and energy-efficient memories. Resistive switching is attractive because of, inter alia, increased switching speed and device density. On electrical stimulus, complex nanoscale redox processes are suspected to induce a resistance change in memristive devices. Quantitative information about these processes, which has been experimentally inaccessible so far, is essential for further advances. Here we use in operando spectromicroscopy to verify that redox reactions drive the resistance change. A remarkable agreement between experimental quantification of the redox state and device simulation reveals that changes in donor concentration by a factor of 2–3 at electrode-oxide interfaces cause a modulation of the effective Schottky barrier and lead to >2 orders of magnitude change in device resistance. These findings allow realistic device simulations, opening a route to less empirical and more predictive design of future memory cells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000381772600001
C6  - pmid:27539213
DO  - DOI:10.1038/ncomms12398
UR  - https://juser.fz-juelich.de/record/819303
ER  -