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@ARTICLE{Baeumer:819303,
      author       = {Baeumer, Christoph and Schmitz, Christoph and Marchewka,
                      Astrid and Valenta, Richard and Hackl, Johanna and Raab,
                      Nicolas and Rogers, Steven P. and Khan, M. Imtiaz and
                      Nemsak, Slavomir and Shim, Moonsub and Menzel, Stephan and
                      Schneider, Claus Michael and Waser, R. and Müller, David
                      and Dittmann, Regina},
      title        = {{Q}uantifying redox-induced {S}chottky barrier variations
                      in memristive devices via in operando spectromicroscopy with
                      graphene electrodes},
      journal      = {Nature Communications},
      volume       = {7},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2016-05004},
      pages        = {12398 -},
      year         = {2016},
      abstract     = {The continuing revolutionary success of mobile computing
                      and smart devices calls for the development of novel, cost-
                      and energy-efficient memories. Resistive switching is
                      attractive because of, inter alia, increased switching speed
                      and device density. On electrical stimulus, complex
                      nanoscale redox processes are suspected to induce a
                      resistance change in memristive devices. Quantitative
                      information about these processes, which has been
                      experimentally inaccessible so far, is essential for further
                      advances. Here we use in operando spectromicroscopy to
                      verify that redox reactions drive the resistance change. A
                      remarkable agreement between experimental quantification of
                      the redox state and device simulation reveals that changes
                      in donor concentration by a factor of 2–3 at
                      electrode-oxide interfaces cause a modulation of the
                      effective Schottky barrier and lead to >2 orders of
                      magnitude change in device resistance. These findings allow
                      realistic device simulations, opening a route to less
                      empirical and more predictive design of future memory
                      cells.},
      cin          = {PGI-7},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000381772600001},
      pubmed       = {pmid:27539213},
      doi          = {10.1038/ncomms12398},
      url          = {https://juser.fz-juelich.de/record/819303},
}