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@ARTICLE{Dai:819646,
      author       = {Dai, Y. and Schubert, J. and Hollmann, E. and Mussler, G.
                      and Wördenweber, R.},
      title        = {{E}ngineering of the {C}urie temperature of epitaxial
                      {S}r1−x{B}ax{T}i{O}3 films via strain},
      journal      = {Journal of applied physics},
      volume       = {120},
      number       = {11},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2016-05261},
      pages        = {114101 -},
      year         = {2016},
      abstract     = {The impact of strain on the structural and electrical
                      properties of epitaxial Sr1xBaxTiO3 films grown on single
                      crystalline DyScO3 (110), TbScO3 (110), and GdScO3 (110)
                      substrates is presented. X-ray diffraction measurements
                      demonstrate that all films are grown epitaxially. The
                      tensile in-plane strain is only partially compensated by a
                      contraction of the out-of-plane lattice parameter. As a
                      result, the volume of the unit cell of the Sr1-xBaxTiO3 film
                      increases due to the tensile strain, and the resulting
                      Poisson ratio of the film is 0.33, which is larger than but
                      still close to the literature values of 0.23 for unstrained
                      defect-free SrTiO3. The Curie temperature derived from the
                      temperature dependence of the in-plane dielectric response
                      leads to a straintemperature phase diagram for the epitaxial
                      Sr1-xBaxTiO3 films. The experimental data show a deviation
                      from the linear dependence predicted by the Landau
                      thermodynamic theory for largestrain $(>1.2\%).$ However,
                      using the equilibrium thermodynamic analysis, we can
                      demonstrate that this deviation arises from the relaxation
                      of the strain due to defect formation in the film. The
                      result reveals that in addition to the nominal misfit
                      strain, the defect formation strongly affects the effective
                      strain and, thus, the dielectric response of epitaxially
                      grown ferroelectric films. Published by AIP Publishing.},
      cin          = {PGI-8 / PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / I:(DE-Juel1)PGI-9-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000384573200011},
      doi          = {10.1063/1.4962853},
      url          = {https://juser.fz-juelich.de/record/819646},
}