% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INPROCEEDINGS{Wrdenweber:819684,
      author       = {Wördenweber, Roger and Schwarzkopf, Jutta and cai, biya
                      and Dai, Yang and Braun, Dorothea and Schubert, Jürgen},
      title        = {{S}train {E}ngineered {F}erroelectric {O}xides: {A}
                      {P}ossible {R}oute to {I}mproved or even {N}ovel
                      {A}pplications},
      reportid     = {FZJ-2016-05291},
      year         = {2016},
      abstract     = {Due to their tendency to form ionic states, oxides of the
                      3d transition metal are (i) highly interesting for various
                      applications and (ii) can easily be affected by relatively
                      simple means. Well known examples are high-temperature
                      superconductors (Tc > 100K), superisolators ( > 1012
                      m), or high-k material ( > 20000). Especially the
                      latter – i.e. ferroelectric oxides - show extremely high
                      permittivity and piezoelectricity however only close to the
                      phase transition To which is typically far below or above
                      room temperature. Therefore it is of interest to shift To
                      towards room temperature without loosing too much of the
                      extraordinary properties of the ferroelectric oxide.In this
                      contribution I will present a way to engineer the transition
                      temperature, the permittivity and the conductivity of
                      epitaxially grown oxide films via strain. Anisotropic
                      biaxial strain (tensile or compressive) is generated in
                      NaNbO3 and SrTiO3 films (20-100nm) via epitaxially growth on
                      single-crystalline oxide substrates with different lattice
                      mismatch. Generally, tensile in-plane strain leads to an
                      increase of the ferroelectric in-plane transition
                      temperature whereas compressive strain tends to decrease the
                      transition temperature. Shifts of the transition temperature
                      by several 100K can easily be obtained via this method
                      leading to room-temperature permittivity of several 1000.
                      The phase transition itself and the ferroelectric states of
                      the anisotropically strained films turn out to be highly
                      complex. First, the transition temperature depends on the
                      direction of the applied electric field which contradicts
                      the concept of an uniform phase transition for a given
                      system. Second, all systems, that we examined, showed
                      relaxor properties which are usually expected for systems
                      consisting of a mixture of phases. Third, most ferroelectric
                      properties strongly depend on the applied electric field.
                      The different observations are discussed in terms of
                      existing models. Furthermore I will sketch possible concepts
                      and first attempts to use these systems for instance for
                      improved sensor devices (e.g. thin films SAW sensors), data
                      storage or even exotic novel concepts like artificial
                      synapses.},
      month         = {Apr},
      date          = {2016-04-06},
      organization  = {TO-BE Spring Meeting 2016, Warwick
                       (United Kingdom), 6 Apr 2016 - 8 Apr
                       2016},
      subtyp        = {Invited},
      cin          = {PGI-8 / JARA-FIT / PGI-9},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
      pid          = {G:(DE-HGF)POF3-523},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/819684},
}