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| 001 | 819686 | ||
| 005 | 20210129224335.0 | ||
| 037 | _ | _ | |a FZJ-2016-05293 |
| 100 | 1 | _ | |a Dai, Yang |0 P:(DE-Juel1)161308 |b 0 |u fzj |
| 111 | 2 | _ | |a International Conference on: Nano confined superconductors and their application |c Garmisch-Partenkirchen |d 2016-09-03 - 2016-09-07 |w Germany |
| 245 | _ | _ | |a Strain Induced insulator-conductor transition in epitaxial SrTiO3 films |
| 260 | _ | _ | |c 2016 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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| 520 | _ | _ | |a The metal-insulator transition temperature of SrTiO3 films grown on single crystalline DyScO3 (110), TbScO3 (110), and GdScO3 (110) substrates is tuned by the lattice-mismatch epitaxial strain. X-ray diffraction measurements demonstrate that all films are grown epitaxially. A systematic variation in the electrical transport properties has been observed with the change in the lattice mismatch between films and various substrates. It is shown that by a proper selection of mismatch between 0 to 1.6 % range of this study) and thickness between 5 to 200 nm of films, it is possible to control and precisely tune the metal-insulator transition temperature to a desired value, i.e. from 10 to 300 K. We demonstrate electrically switchable resistance using planar electrodes with 200-1000 nm distance. The electronic transport experimental results show an anisotropy transport for the anisotropically strained films. This confirms that the anisotropic misfit induced two in-plane phases have different behaviors that is highly directionally-dependent. Our results might be of importance for applications in storage, memory, and even artificial synaptic devices for neuromorphic computing. |
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| 700 | 1 | _ | |a Schubert, Jürgen |0 P:(DE-Juel1)128631 |b 1 |u fzj |
| 700 | 1 | _ | |a Wördenweber, Roger |0 P:(DE-Juel1)128749 |b 2 |u fzj |
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| 914 | 1 | _ | |y 2016 |
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