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@PHDTHESIS{Zubkov:819717,
author = {Zubkov, Evgeny},
title = {{A}ufbau einer {V}ierspitzen-{R}astertunnelmikroskop/
{R}asterelektronikroskop-{K}ombination und
{L}eitfähigkeitsmessungen an {S}ilizid {N}anodrähten},
volume = {55},
school = {RWTH Aachen},
type = {Dr.},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2016-05318},
isbn = {978-3-89336-848-8},
series = {Schriften des Forschungszentrum Jülich. Reihe
Schlüsseltechnologien/ Key Technologies},
pages = {150 S.},
year = {2013},
note = {RWTH Aachen, Diss., 2013},
abstract = {In this work the combination of a four-tip scanning
tunneling microscope with a scanning electron microscope is
presented. By means of this apparatus it is possible to
perform the conductivity measurements on the in-situ
prepared nanostructures in ultra-high vacuum. With the aid
of a scanning electron microscope (SEM), it becomes possible
to position the tunneling tips of the four-tip scanning
tunneling microscope (STM), so that an arrangement for a
four-point probe measurement on nanostructures can be
obtained. The STM head was built according to the novel
coaxial Beetle concept. This concept allows on the one hand,
a very compact arrangement of the components of the STM and
on the other hand, the new-built STM head has a good
mechanical stability, in order to achieve atomic resolution
with all four STM units. The atomic resolution of the STM
units was confirmed by scanning a Si(111)-7x7 surface. The
thermal drift during the STM operation, as well as the
resonant frequencies of the mechanical structure of the STM
head, were determined. The scanning electron microscope
allows the precise and safe navigation of the tunneling tips
on the sample surface. Multi tip spectroscopy with up to
four STM units can be performed synchronously. To
demonstrate the capabilities of the new-built apparatus the
conductivity measurements were carried out on metallic
yttrium silicide nanowires. The nanowires were prepared by
the in-situ deposition of yttrium on a heated Si(110) sample
surface. Current-voltage curves were recorded on the
nanowires and on the wetting layer in-between. The curves
indicate an existence of the Schottky barrier between the
yttrium silicide nanowires and the silicon bulk. By means of
the two-tip measurements with a gate, the insulating
property of the Schottky barrier has been confirmed. Using
this Schottky barrier, it is possible to limit the current
to the nanowire and to prevent it from flowing through the
silicon bulk. A four-tip resistance measurement with a gate
has provided the resistance of the nanowire. From the
dimensions of the nanowire the resistivity was calculated.
The obtained resistivity was found to be in agreement with
literature values. In addition, the contact resistances of
the tunneling tips on the silicide nanowires were
determined.},
cin = {PGI-3},
cid = {I:(DE-Juel1)PGI-3-20110106},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)11},
url = {https://juser.fz-juelich.de/record/819717},
}