%0 Journal Article
%A Weyrich, C.
%A Drögeler, M.
%A Kampmeier, J.
%A Eschbach, M.
%A Mussler, G.
%A Merzenich, T.
%A Stoica, T.
%A Batov, I. E.
%A Schubert, J.
%A Plucinski, L.
%A Beschoten, B.
%A Schneider, C. M.
%A Stampfer, C.
%A Grützmacher, D.
%A Schäpers, Thomas
%T Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers
%J Journal of physics / Condensed matter
%V 28
%N 49
%@ 1361-648X
%C Bristol
%I IOP Publ.
%M FZJ-2016-05745
%P 495501 -
%D 2016
%X Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy.Scanning Raman spectroscopy reveals that the (Bi1−xSbx)2Te3 layers with an intermediateSb content show spatial composition inhomogeneities. The observed spectra broadening inangular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena.Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift ofthe Fermi level from the conduction band to the valence band. This shift is also confirmed bycorresponding magnetotransport measurements where the conductance changes from n- top-type. In this transition region, an increase of the resistivity is found, indicating a locationof the Fermi level within the band gap region. More detailed measurements in the transitionregion reveals that the transport takes place in two independent channels. By means of a gateelectrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermilevel within the topologically protected surface states.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000386495900001
%$ pmid:27749271
%R 10.1088/0953-8984/28/49/495501
%U https://juser.fz-juelich.de/record/820435