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000820435 1001_ $$0P:(DE-Juel1)145705$$aWeyrich, C.$$b0
000820435 245__ $$aGrowth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers
000820435 260__ $$aBristol$$bIOP Publ.$$c2016
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000820435 520__ $$aTernary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy.Scanning Raman spectroscopy reveals that the (Bi1−xSbx)2Te3 layers with an intermediateSb content show spatial composition inhomogeneities. The observed spectra broadening inangular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena.Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift ofthe Fermi level from the conduction band to the valence band. This shift is also confirmed bycorresponding magnetotransport measurements where the conductance changes from n- top-type. In this transition region, an increase of the resistivity is found, indicating a locationof the Fermi level within the band gap region. More detailed measurements in the transitionregion reveals that the transport takes place in two independent channels. By means of a gateelectrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermilevel within the topologically protected surface states.
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000820435 7001_ $$0P:(DE-HGF)0$$aDrögeler, M.$$b1
000820435 7001_ $$0P:(DE-Juel1)145467$$aKampmeier, J.$$b2
000820435 7001_ $$0P:(DE-Juel1)145534$$aEschbach, M.$$b3
000820435 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b4
000820435 7001_ $$0P:(DE-HGF)0$$aMerzenich, T.$$b5
000820435 7001_ $$0P:(DE-HGF)0$$aStoica, T.$$b6
000820435 7001_ $$0P:(DE-HGF)0$$aBatov, I. E.$$b7
000820435 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b8
000820435 7001_ $$0P:(DE-Juel1)130895$$aPlucinski, L.$$b9
000820435 7001_ $$0P:(DE-HGF)0$$aBeschoten, B.$$b10
000820435 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C. M.$$b11
000820435 7001_ $$0P:(DE-HGF)0$$aStampfer, C.$$b12
000820435 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b13
000820435 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b14$$eCorresponding author
000820435 773__ $$0PERI:(DE-600)1472968-4$$a10.1088/0953-8984/28/49/495501$$gVol. 28, no. 49, p. 495501 -$$n49$$p495501 -$$tJournal of physics / Condensed matter$$v28$$x1361-648X$$y2016
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