TY - JOUR
AU - Weyrich, C.
AU - Drögeler, M.
AU - Kampmeier, J.
AU - Eschbach, M.
AU - Mussler, G.
AU - Merzenich, T.
AU - Stoica, T.
AU - Batov, I. E.
AU - Schubert, J.
AU - Plucinski, L.
AU - Beschoten, B.
AU - Schneider, C. M.
AU - Stampfer, C.
AU - Grützmacher, D.
AU - Schäpers, Thomas
TI - Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers
JO - Journal of physics / Condensed matter
VL - 28
IS - 49
SN - 1361-648X
CY - Bristol
PB - IOP Publ.
M1 - FZJ-2016-05745
SP - 495501 -
PY - 2016
AB - Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy.Scanning Raman spectroscopy reveals that the (Bi1−xSbx)2Te3 layers with an intermediateSb content show spatial composition inhomogeneities. The observed spectra broadening inangular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena.Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift ofthe Fermi level from the conduction band to the valence band. This shift is also confirmed bycorresponding magnetotransport measurements where the conductance changes from n- top-type. In this transition region, an increase of the resistivity is found, indicating a locationof the Fermi level within the band gap region. More detailed measurements in the transitionregion reveals that the transport takes place in two independent channels. By means of a gateelectrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermilevel within the topologically protected surface states.
LB - PUB:(DE-HGF)16
UR - <Go to ISI:>//WOS:000386495900001
C6 - pmid:27749271
DO - DOI:10.1088/0953-8984/28/49/495501
UR - https://juser.fz-juelich.de/record/820435
ER -