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@ARTICLE{Weyrich:820435,
      author       = {Weyrich, C. and Drögeler, M. and Kampmeier, J. and
                      Eschbach, M. and Mussler, G. and Merzenich, T. and Stoica,
                      T. and Batov, I. E. and Schubert, J. and Plucinski, L. and
                      Beschoten, B. and Schneider, C. M. and Stampfer, C. and
                      Grützmacher, D. and Schäpers, Thomas},
      title        = {{G}rowth, characterization, and transport properties of
                      ternary ({B}i $_{1− x}$ {S}b $_{x}$ )$_{2}$ {T}e $_{3}$
                      topological insulator layers},
      journal      = {Journal of physics / Condensed matter},
      volume       = {28},
      number       = {49},
      issn         = {1361-648X},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2016-05745},
      pages        = {495501 -},
      year         = {2016},
      abstract     = {Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0
                      and $100\%$ were deposited ona Si(1 1 1) substrate by means
                      of molecular beam epitaxy. X-ray diffraction
                      measurementsconfirm single crystal growth in all cases. The
                      Sb content is determined by x-ray photoelectronspectroscopy.
                      Consistent values of the Sb content are obtained from Raman
                      spectroscopy.Scanning Raman spectroscopy reveals that the
                      (Bi1−xSbx)2Te3 layers with an intermediateSb content show
                      spatial composition inhomogeneities. The observed spectra
                      broadening inangular-resolved photoemission spectroscopy
                      (ARPES) is also attributed to this phenomena.Upon increasing
                      the Sb content from x = 0 to 1 the ARPES measurements show a
                      shift ofthe Fermi level from the conduction band to the
                      valence band. This shift is also confirmed bycorresponding
                      magnetotransport measurements where the conductance changes
                      from n- top-type. In this transition region, an increase of
                      the resistivity is found, indicating a locationof the Fermi
                      level within the band gap region. More detailed measurements
                      in the transitionregion reveals that the transport takes
                      place in two independent channels. By means of a
                      gateelectrode the transport can be changed from n- to
                      p-type, thus allowing a tuning of the Fermilevel within the
                      topologically protected surface states.},
      cin          = {PGI-9 / JARA-FIT / PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-6-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000386495900001},
      pubmed       = {pmid:27749271},
      doi          = {10.1088/0953-8984/28/49/495501},
      url          = {https://juser.fz-juelich.de/record/820435},
}