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| 001 | 820435 | ||
| 005 | 20210129224500.0 | ||
| 024 | 7 | _ | |a 10.1088/0953-8984/28/49/495501 |2 doi |
| 024 | 7 | _ | |a 0953-8984 |2 ISSN |
| 024 | 7 | _ | |a 1361-648X |2 ISSN |
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| 037 | _ | _ | |a FZJ-2016-05745 |
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| 100 | 1 | _ | |a Weyrich, C. |0 P:(DE-Juel1)145705 |b 0 |
| 245 | _ | _ | |a Growth, characterization, and transport properties of ternary (Bi $_{1− x}$ Sb $_{x}$ )$_{2}$ Te $_{3}$ topological insulator layers |
| 260 | _ | _ | |a Bristol |c 2016 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Ternary (Bi1−xSbx)2Te3 films with an Sb content between 0 and 100% were deposited ona Si(1 1 1) substrate by means of molecular beam epitaxy. X-ray diffraction measurementsconfirm single crystal growth in all cases. The Sb content is determined by x-ray photoelectronspectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy.Scanning Raman spectroscopy reveals that the (Bi1−xSbx)2Te3 layers with an intermediateSb content show spatial composition inhomogeneities. The observed spectra broadening inangular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena.Upon increasing the Sb content from x = 0 to 1 the ARPES measurements show a shift ofthe Fermi level from the conduction band to the valence band. This shift is also confirmed bycorresponding magnetotransport measurements where the conductance changes from n- top-type. In this transition region, an increase of the resistivity is found, indicating a locationof the Fermi level within the band gap region. More detailed measurements in the transitionregion reveals that the transport takes place in two independent channels. By means of a gateelectrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermilevel within the topologically protected surface states. |
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| 700 | 1 | _ | |a Drögeler, M. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Kampmeier, J. |0 P:(DE-Juel1)145467 |b 2 |
| 700 | 1 | _ | |a Eschbach, M. |0 P:(DE-Juel1)145534 |b 3 |
| 700 | 1 | _ | |a Mussler, G. |0 P:(DE-Juel1)128617 |b 4 |
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| 700 | 1 | _ | |a Schneider, C. M. |0 P:(DE-Juel1)130948 |b 11 |
| 700 | 1 | _ | |a Stampfer, C. |0 P:(DE-HGF)0 |b 12 |
| 700 | 1 | _ | |a Grützmacher, D. |0 P:(DE-Juel1)125588 |b 13 |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 14 |e Corresponding author |
| 773 | _ | _ | |a 10.1088/0953-8984/28/49/495501 |g Vol. 28, no. 49, p. 495501 - |0 PERI:(DE-600)1472968-4 |n 49 |p 495501 - |t Journal of physics / Condensed matter |v 28 |y 2016 |x 1361-648X |
| 856 | 4 | _ | |y Restricted |u https://juser.fz-juelich.de/record/820435/files/2016_Weyrich_toplogische%20Isolatoren.pdf |
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