000820734 001__ 820734
000820734 005__ 20210129224606.0
000820734 0247_ $$2doi$$a10.1063/1.4965962
000820734 0247_ $$2ISSN$$a0021-8979
000820734 0247_ $$2ISSN$$a0148-6349
000820734 0247_ $$2ISSN$$a1089-7550
000820734 0247_ $$2WOS$$aWOS:000387580600054
000820734 0247_ $$2Handle$$a2128/17052
000820734 0247_ $$2altmetric$$aaltmetric:9638864
000820734 037__ $$aFZJ-2016-06001
000820734 082__ $$a530
000820734 1001_ $$0P:(DE-HGF)0$$aPlank, H.$$b0$$eCorresponding author
000820734 245__ $$aOpto-electronic characterization of three dimensional topological insulators
000820734 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2016
000820734 3367_ $$2DRIVER$$aarticle
000820734 3367_ $$2DataCite$$aOutput Types/Journal article
000820734 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1478876777_32301
000820734 3367_ $$2BibTeX$$aARTICLE
000820734 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000820734 3367_ $$00$$2EndNote$$aJournal Article
000820734 520__ $$aWe demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1− xSbx)2Te3 based three dimensional (3D) topological insulators (TIs). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneities in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers.
000820734 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000820734 588__ $$aDataset connected to CrossRef
000820734 7001_ $$0P:(DE-HGF)0$$aDanilov, S. N.$$b1
000820734 7001_ $$0P:(DE-HGF)0$$aBel'kov, V. V.$$b2
000820734 7001_ $$0P:(DE-HGF)0$$aShalygin, V. A.$$b3
000820734 7001_ $$0P:(DE-Juel1)145467$$aKampmeier, J.$$b4$$ufzj
000820734 7001_ $$0P:(DE-Juel1)156236$$aLanius, Martin$$b5$$ufzj
000820734 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b6$$ufzj
000820734 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b7$$ufzj
000820734 7001_ $$0P:(DE-HGF)0$$aGanichev, S. D.$$b8
000820734 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4965962$$gVol. 120, no. 16, p. 165301 -$$n16$$p165301 -$$tJournal of applied physics$$v120$$x1089-7550$$y2016
000820734 8564_ $$uhttps://juser.fz-juelich.de/record/820734/files/1.4965962.pdf$$yOpenAccess
000820734 8564_ $$uhttps://juser.fz-juelich.de/record/820734/files/1.4965962.gif?subformat=icon$$xicon$$yOpenAccess
000820734 8564_ $$uhttps://juser.fz-juelich.de/record/820734/files/1.4965962.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000820734 8564_ $$uhttps://juser.fz-juelich.de/record/820734/files/1.4965962.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000820734 8564_ $$uhttps://juser.fz-juelich.de/record/820734/files/1.4965962.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000820734 909CO $$ooai:juser.fz-juelich.de:820734$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000820734 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000820734 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000820734 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bJ APPL PHYS : 2015
000820734 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000820734 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000820734 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000820734 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000820734 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000820734 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000820734 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000820734 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000820734 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000820734 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000820734 9141_ $$y2016
000820734 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145467$$aForschungszentrum Jülich$$b4$$kFZJ
000820734 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)156236$$aForschungszentrum Jülich$$b5$$kFZJ
000820734 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich$$b6$$kFZJ
000820734 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b7$$kFZJ
000820734 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000820734 920__ $$lyes
000820734 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000820734 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000820734 980__ $$ajournal
000820734 980__ $$aVDB
000820734 980__ $$aUNRESTRICTED
000820734 980__ $$aI:(DE-Juel1)PGI-9-20110106
000820734 980__ $$aI:(DE-82)080009_20140620
000820734 9801_ $$aFullTexts