TY  - JOUR
AU  - Plank, H.
AU  - Danilov, S. N.
AU  - Bel'kov, V. V.
AU  - Shalygin, V. A.
AU  - Kampmeier, J.
AU  - Lanius, Martin
AU  - Mussler, G.
AU  - Grützmacher, D.
AU  - Ganichev, S. D.
TI  - Opto-electronic characterization of three dimensional topological insulators
JO  - Journal of applied physics
VL  - 120
IS  - 16
SN  - 1089-7550
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2016-06001
SP  - 165301 -
PY  - 2016
AB  - We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1− xSbx)2Te3 based three dimensional (3D) topological insulators (TIs). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneities in the electronic properties of the surface states and (ii) the local domain orientation. An important advantage of the proposed method is that it can be applied to study TIs at room temperature and even in materials with a high electron density of bulk carriers.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000387580600054
DO  - DOI:10.1063/1.4965962
UR  - https://juser.fz-juelich.de/record/820734
ER  -