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@ARTICLE{Plank:820734,
author = {Plank, H. and Danilov, S. N. and Bel'kov, V. V. and
Shalygin, V. A. and Kampmeier, J. and Lanius, Martin and
Mussler, G. and Grützmacher, D. and Ganichev, S. D.},
title = {{O}pto-electronic characterization of three dimensional
topological insulators},
journal = {Journal of applied physics},
volume = {120},
number = {16},
issn = {1089-7550},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2016-06001},
pages = {165301 -},
year = {2016},
abstract = {We demonstrate that the terahertz/infrared radiation
induced photogalvanic effect, which is sensitive to the
surface symmetry and scattering details, can be applied to
study the high frequency conductivity of the surface states
in (Bi1− xSbx)2Te3 based three dimensional (3D)
topological insulators (TIs). In particular, measuring the
polarization dependence of the photogalvanic current and
scanning with a micrometre sized beam spot across the
sample, provides access to (i) topographical inhomogeneities
in the electronic properties of the surface states and (ii)
the local domain orientation. An important advantage of the
proposed method is that it can be applied to study TIs at
room temperature and even in materials with a high electron
density of bulk carriers.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {522 - Controlling Spin-Based Phenomena (POF3-522)},
pid = {G:(DE-HGF)POF3-522},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000387580600054},
doi = {10.1063/1.4965962},
url = {https://juser.fz-juelich.de/record/820734},
}