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@ARTICLE{Portz:821126,
author = {Portz, V. and Schnedler, M. and Duchamp, M. and Hsiao,
F.-M. and Eisele, H. and Carlin, J.-F. and Butté, R. and
Grandjean, N. and Dunin-Borkowski, R. E. and Ebert, Ph.},
title = {{S}train and compositional fluctuations in
{A}l$_{0.81}${I}n$_{0.19}${N}/{G}a{N} heterostructures},
journal = {Applied physics letters},
volume = {109},
number = {13},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2016-06369},
pages = {132102 -},
year = {2016},
abstract = {The strain and compositional fluctuations of nearly
lattice-matched Al0.81In0.19N/GaN heterostructures are
investigated by cross-sectional scanning tunneling
microscopy and selected area electron diffraction
measurements in scanning electron transmission microscopy.
The presence of strain induces height modulations governed
by different roughness components at the cleavage surfaces.
The surface height modulations are compatible with a
relaxation of alternatingly compressive and tensile strained
domains, indicating compositional fluctuations. Changes of
the a lattice constant are traced to interface misfit edge
dislocations. The dislocations induce steps increasing the
roughness within the Al0.81In0.19N layers.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {141 - Controlling Electron Charge-Based Phenomena
(POF3-141)},
pid = {G:(DE-HGF)POF3-141},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000384747900021},
doi = {10.1063/1.4963184},
url = {https://juser.fz-juelich.de/record/821126},
}