%0 Journal Article
%A Liu, Linjie
%A Jin, Lei
%A Knoll, Lars
%A Wirths, Stephan
%A Buca, Dan Mihai
%A Mussler, Gregor
%A Holländer, Bernhard
%A Xu, Dawei
%A Di, Zeng Feng
%A Zhang, Miao
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
%J Microelectronic engineering
%V 137
%@ 0167-9317
%C [S.l.]
%I Elsevier
%M FZJ-2016-06393
%P 88 - 91
%D 2015
%X We present a systematic investigation of the formation of Ni germanosilicide layers on strained SiGe/Si(1 0 0) substrates. Homogeneous Ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin Al/Ni multi-layers on SiGe. The morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of Al percentage and annealing temperature. Best results of Ni germanosilicide layers are achieved at 400 °C with 20% Al on fully strained SiGe layers with Ge contents of 36 at.% and 45 at.%. The uniform layers show a Ni5(Si1−xGex)3 phase. The compressive strain in the remaining SiGe layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility SiGe layers for device application.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000355047500017
%R 10.1016/j.mee.2014.11.022
%U https://juser.fz-juelich.de/record/821155