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000821155 1001_ $$0P:(DE-HGF)0$$aLiu, Linjie$$b0
000821155 245__ $$aUltrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
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000821155 520__ $$aWe present a systematic investigation of the formation of Ni germanosilicide layers on strained SiGe/Si(1 0 0) substrates. Homogeneous Ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin Al/Ni multi-layers on SiGe. The morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of Al percentage and annealing temperature. Best results of Ni germanosilicide layers are achieved at 400 °C with 20% Al on fully strained SiGe layers with Ge contents of 36 at.% and 45 at.%. The uniform layers show a Ni5(Si1−xGex)3 phase. The compressive strain in the remaining SiGe layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility SiGe layers for device application.
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000821155 7001_ $$0P:(DE-Juel1)138790$$aJin, Lei$$b1$$ufzj
000821155 7001_ $$0P:(DE-HGF)0$$aKnoll, Lars$$b2
000821155 7001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b3$$ufzj
000821155 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b4
000821155 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b5$$ufzj
000821155 7001_ $$0P:(DE-HGF)0$$aHolländer, Bernhard$$b6
000821155 7001_ $$0P:(DE-HGF)0$$aXu, Dawei$$b7
000821155 7001_ $$0P:(DE-HGF)0$$aDi, Zeng Feng$$b8
000821155 7001_ $$0P:(DE-HGF)0$$aZhang, Miao$$b9
000821155 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b10$$ufzj
000821155 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b11$$eCorresponding author
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