TY  - JOUR
AU  - Liu, Linjie
AU  - Jin, Lei
AU  - Knoll, Lars
AU  - Wirths, Stephan
AU  - Buca, Dan Mihai
AU  - Mussler, Gregor
AU  - Holländer, Bernhard
AU  - Xu, Dawei
AU  - Di, Zeng Feng
AU  - Zhang, Miao
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
JO  - Microelectronic engineering
VL  - 137
SN  - 0167-9317
CY  - [S.l.]
PB  - Elsevier
M1  - FZJ-2016-06393
SP  - 88 - 91
PY  - 2015
AB  - We present a systematic investigation of the formation of Ni germanosilicide layers on strained SiGe/Si(1 0 0) substrates. Homogeneous Ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin Al/Ni multi-layers on SiGe. The morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of Al percentage and annealing temperature. Best results of Ni germanosilicide layers are achieved at 400 °C with 20% Al on fully strained SiGe layers with Ge contents of 36 at.% and 45 at.%. The uniform layers show a Ni5(Si1−xGex)3 phase. The compressive strain in the remaining SiGe layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility SiGe layers for device application.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000355047500017
DO  - DOI:10.1016/j.mee.2014.11.022
UR  - https://juser.fz-juelich.de/record/821155
ER  -