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@ARTICLE{Liu:821155,
      author       = {Liu, Linjie and Jin, Lei and Knoll, Lars and Wirths,
                      Stephan and Buca, Dan Mihai and Mussler, Gregor and
                      Holländer, Bernhard and Xu, Dawei and Di, Zeng Feng and
                      Zhang, Miao and Mantl, Siegfried and Zhao, Qing-Tai},
      title        = {{U}ltrathin homogeneous {N}i({A}l) germanosilicide layer
                      formation on strained {S}i{G}e with {A}l/{N}i multi-layers},
      journal      = {Microelectronic engineering},
      volume       = {137},
      issn         = {0167-9317},
      address      = {[S.l.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-06393},
      pages        = {88 - 91},
      year         = {2015},
      abstract     = {We present a systematic investigation of the formation of
                      Ni germanosilicide layers on strained SiGe/Si(1 0 0)
                      substrates. Homogeneous Ni germanosilicide layers with
                      smooth surface, sharp interface and low sheet resistance are
                      obtained by annealing thin Al/Ni multi-layers on SiGe. The
                      morphology, composition and sheet resistance of the
                      germanosilicide layers are investigated as a function of Al
                      percentage and annealing temperature. Best results of Ni
                      germanosilicide layers are achieved at 400 °C with $20\%$
                      Al on fully strained SiGe layers with Ge contents of 36
                      $at.\%$ and 45 $at.\%.$ The uniform layers show a
                      Ni5(Si1−xGex)3 phase. The compressive strain in the
                      remaining SiGe layer is conserved after germanosilicidation,
                      providing uniform contacts for high hole mobility SiGe
                      layers for device application.},
      cin          = {PGI-9 / PGI-5 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000355047500017},
      doi          = {10.1016/j.mee.2014.11.022},
      url          = {https://juser.fz-juelich.de/record/821155},
}