Home > Publications database > Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers > print

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024 7 _ |a 10.1016/j.mee.2014.11.022
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100 1 _ |a Liu, Linjie
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245 _ _ |a Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
260 _ _ |a [S.l.]
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520 _ _ |a We present a systematic investigation of the formation of Ni germanosilicide layers on strained SiGe/Si(1 0 0) substrates. Homogeneous Ni germanosilicide layers with smooth surface, sharp interface and low sheet resistance are obtained by annealing thin Al/Ni multi-layers on SiGe. The morphology, composition and sheet resistance of the germanosilicide layers are investigated as a function of Al percentage and annealing temperature. Best results of Ni germanosilicide layers are achieved at 400 °C with 20% Al on fully strained SiGe layers with Ge contents of 36 at.% and 45 at.%. The uniform layers show a Ni5(Si1−xGex)3 phase. The compressive strain in the remaining SiGe layer is conserved after germanosilicidation, providing uniform contacts for high hole mobility SiGe layers for device application.
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700 1 _ |a Jin, Lei
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700 1 _ |a Knoll, Lars
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700 1 _ |a Wirths, Stephan
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700 1 _ |a Holländer, Bernhard
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700 1 _ |a Xu, Dawei
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700 1 _ |a Di, Zeng Feng
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700 1 _ |a Zhang, Miao
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700 1 _ |a Mantl, Siegfried
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700 1 _ |a Zhao, Qing-Tai
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773 _ _ |a 10.1016/j.mee.2014.11.022
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