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@INPROCEEDINGS{SchulteBraucks:821186,
      author       = {Schulte-Braucks, Christian and Glass, S. and Hofmann, E.
                      and Stange, D. and von den Driesch, N. and Zhao, Q. T. and
                      Buca, D. and Mantl, S. and Hartmann, J. M. and Ikonic, Z.},
      title        = {{P}rocess modules for {G}e{S}n nanoelectronics with high
                      {S}n-contents},
      address      = {[Piscataway, NJ]},
      publisher    = {IEEE},
      reportid     = {FZJ-2016-06424},
      isbn         = {978-1-4673-8609-8},
      pages        = {24-27},
      year         = {2016},
      abstract     = {In this paper we present a systematic study of GeSn n-FETs.
                      First, process modules such as high-k metal gate stacks and
                      NiGeSn - metallic contacts for use as source/drain contacts
                      are characterized and discussed. GeSn alloys of different Sn
                      content allow the study of the capacitance-voltage (CV) and
                      contact characteristics of both direct and indirect bandgap
                      semiconductors. We then present GeSn n-FET devices we have
                      fabricated. The device characterization includes temperature
                      dependent IV characteristics. As important step towards GeSn
                      for tunnel-FET Ge0.87Sn0.13 tunnel-diodes with negative
                      differential resistance at reduced temperature are shown.
                      The present work provides a base for further optimization of
                      GeSn FET and novel tunnel FET devices.},
      date          = {1252016},
      organization  = {2016 Joint International EUROSOI
                       Workshop and International Conference
                       on Ultimate Integration on Silicon
                       (EUROSOI-ULIS), Vienna (Austria), 5 Dec
                       2016 - 7 Dec 2016},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      doi          = {10.1109/ULIS.2016.7440043},
      url          = {https://juser.fz-juelich.de/record/821186},
}