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@ARTICLE{Blaeser:821189,
      author       = {Blaeser, Sebastian and Glass, Stefan and Schulte-Braucks,
                      Christian and Narimani, Keyvan and von den Driesch, Nils and
                      Wirths, Stephan and Tiedemann, Andreas and Trellenkamp,
                      Stefan and Buca, Dan Mihai and Mantl, Siegfried and Zhao,
                      Qing-Tai},
      title        = {{L}ine {T}unneling {D}ominating {C}harge {T}ransport in
                      {S}i{G}e/{S}i {H}eterostructure {TFET}s},
      journal      = {IEEE transactions on electron devices},
      volume       = {63},
      number       = {11},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2016-06427},
      pages        = {4173 - 4178},
      year         = {2016},
      abstract     = {This paper provides an experimental proof that both the
                      ON-current ION and the subthreshold swing SS of Si(Ge)-based
                      tunneling FETs (TFETs) drastically benefit from device
                      architectures promoting line tunneling aligned with the gate
                      electrical field. A novel SiGe/Si heterostructure TFET is
                      fabricated, making use of a selective and self-adjusted
                      silicidation, thus enlarging the area for
                      band-to-band-tunneling (BTBT) in a region directly
                      underneath the gate. In addition, a counter-doped pocket
                      within the SiGe layer at the source tunnel junction is
                      introduced in order to sharpen the corresponding doping
                      profile and, consequently, to shorten the resulting
                      tunneling length. Experimental analysis of activation
                      energies Eα identifies BTBT, dominating the drain current
                      Id in the SiGe/Si heterostructure TFET over a wide region of
                      the gate voltage Vg, thus reducing parasitic influence of
                      Shockley-Read-Hall recombination and trap-assisted
                      tunneling. Both a relatively high ION = 6.7 μA/μm at a
                      supply voltage VDD = 0.5 V and an average SS of about 80
                      mV/decade over four orders of magnitude of Id were
                      achieved.},
      cin          = {PGI-9 / PGI-8-PT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000389340400004},
      doi          = {10.1109/TED.2016.2608383},
      url          = {https://juser.fz-juelich.de/record/821189},
}