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| 001 | 821189 | ||
| 005 | 20210129224821.0 | ||
| 024 | 7 | _ | |a 10.1109/TED.2016.2608383 |2 doi |
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| 100 | 1 | _ | |a Blaeser, Sebastian |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs |
| 260 | _ | _ | |a New York, NY |c 2016 |b IEEE |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a This paper provides an experimental proof that both the ON-current ION and the subthreshold swing SS of Si(Ge)-based tunneling FETs (TFETs) drastically benefit from device architectures promoting line tunneling aligned with the gate electrical field. A novel SiGe/Si heterostructure TFET is fabricated, making use of a selective and self-adjusted silicidation, thus enlarging the area for band-to-band-tunneling (BTBT) in a region directly underneath the gate. In addition, a counter-doped pocket within the SiGe layer at the source tunnel junction is introduced in order to sharpen the corresponding doping profile and, consequently, to shorten the resulting tunneling length. Experimental analysis of activation energies Eα identifies BTBT, dominating the drain current Id in the SiGe/Si heterostructure TFET over a wide region of the gate voltage Vg, thus reducing parasitic influence of Shockley-Read-Hall recombination and trap-assisted tunneling. Both a relatively high ION = 6.7 μA/μm at a supply voltage VDD = 0.5 V and an average SS of about 80 mV/decade over four orders of magnitude of Id were achieved. |
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| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 10 |
| 773 | _ | _ | |a 10.1109/TED.2016.2608383 |g Vol. 63, no. 11, p. 4173 - 4178 |0 PERI:(DE-600)2028088-9 |n 11 |p 4173 - 4178 |t IEEE transactions on electron devices |v 63 |y 2016 |x 1557-9646 |
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