%0 Book Section
%A Leadley, David
%A Prest, Martin
%A Ahopelto, Jouni
%A Brien, Tom
%A Gunnarsson, David
%A Mauskopf, Phil
%A Muhonen, Juha
%A Myronov, Maksym
%A Nguyen, Hung
%A Parker, Evan
%A Prunnila, Mika
%A Richardson-Bullock, James
%A Shah, Vishal
%A Whall, Terry
%A Zhao, Qing-Tai
%Y Balestra, Francis
%T Silicon-Based Cooling Elements
%C Hoboken, NJ, USA
%I John Wiley & Sons, Inc.
%M FZJ-2016-06429
%@ 1-84821-654-8
%B ISTE
%P 303-330
%D 2014
%Z Description based upon print version of record; English
%< Beyond-CMOS Nanodevices 1 / Balestra, Francis (Editor)
%X This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.
%F PUB:(DE-HGF)7
%9 Contribution to a book
%R 10.1002/9781118984772.ch11
%U https://juser.fz-juelich.de/record/821191