000821191 001__ 821191
000821191 005__ 20210129224822.0
000821191 0247_ $$2doi$$a10.1002/9781118984772.ch11
000821191 020__ $$a1-84821-654-8
000821191 020__ $$a978-1-84821-654-9
000821191 037__ $$aFZJ-2016-06429
000821191 041__ $$aEnglish
000821191 082__ $$a621.381
000821191 1001_ $$0P:(DE-HGF)0$$aBalestra, Francis$$b0$$eEditor
000821191 245__ $$aSilicon-Based Cooling Elements
000821191 260__ $$aHoboken, NJ, USA$$bJohn Wiley & Sons, Inc.$$c2014
000821191 29510 $$aBeyond-CMOS Nanodevices 1 / Balestra, Francis (Editor)
000821191 300__ $$a303-330
000821191 3367_ $$2ORCID$$aBOOK_CHAPTER
000821191 3367_ $$07$$2EndNote$$aBook Section
000821191 3367_ $$2DRIVER$$abookPart
000821191 3367_ $$2BibTeX$$aINBOOK
000821191 3367_ $$2DataCite$$aOutput Types/Book chapter
000821191 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$bcontb$$mcontb$$s1481205009_21506
000821191 4900_ $$aISTE
000821191 500__ $$aDescription based upon print version of record; English
000821191 520__ $$aThis chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.
000821191 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000821191 588__ $$aDataset connected to CrossRef Book
000821191 7001_ $$0P:(DE-HGF)0$$aLeadley, David$$b1
000821191 7001_ $$0P:(DE-HGF)0$$aPrest, Martin$$b2
000821191 7001_ $$0P:(DE-HGF)0$$aAhopelto, Jouni$$b3
000821191 7001_ $$0P:(DE-HGF)0$$aBrien, Tom$$b4
000821191 7001_ $$0P:(DE-HGF)0$$aGunnarsson, David$$b5
000821191 7001_ $$0P:(DE-HGF)0$$aMauskopf, Phil$$b6
000821191 7001_ $$0P:(DE-HGF)0$$aMuhonen, Juha$$b7
000821191 7001_ $$0P:(DE-HGF)0$$aMyronov, Maksym$$b8
000821191 7001_ $$0P:(DE-HGF)0$$aNguyen, Hung$$b9
000821191 7001_ $$0P:(DE-HGF)0$$aParker, Evan$$b10
000821191 7001_ $$0P:(DE-HGF)0$$aPrunnila, Mika$$b11
000821191 7001_ $$0P:(DE-HGF)0$$aRichardson-Bullock, James$$b12
000821191 7001_ $$0P:(DE-HGF)0$$aShah, Vishal$$b13
000821191 7001_ $$0P:(DE-HGF)0$$aWhall, Terry$$b14
000821191 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b15$$ufzj
000821191 773__ $$a10.1002/9781118984772.ch11
000821191 909CO $$ooai:juser.fz-juelich.de:821191$$pVDB
000821191 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b15$$kFZJ
000821191 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000821191 9141_ $$y2016
000821191 920__ $$lyes
000821191 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000821191 980__ $$acontb
000821191 980__ $$aVDB
000821191 980__ $$aI:(DE-Juel1)PGI-9-20110106
000821191 980__ $$aUNRESTRICTED