TY  - CHAP
AU  - Leadley, David
AU  - Prest, Martin
AU  - Ahopelto, Jouni
AU  - Brien, Tom
AU  - Gunnarsson, David
AU  - Mauskopf, Phil
AU  - Muhonen, Juha
AU  - Myronov, Maksym
AU  - Nguyen, Hung
AU  - Parker, Evan
AU  - Prunnila, Mika
AU  - Richardson-Bullock, James
AU  - Shah, Vishal
AU  - Whall, Terry
AU  - Zhao, Qing-Tai
A3  - Balestra, Francis
TI  - Silicon-Based Cooling Elements
CY  - Hoboken, NJ, USA
PB  - John Wiley & Sons, Inc.
M1  - FZJ-2016-06429
SN  - 1-84821-654-8
T2  - ISTE
SP  - 303-330
PY  - 2014
N1  - Description based upon print version of record; English
AB  - This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.
LB  - PUB:(DE-HGF)7
DO  - DOI:10.1002/9781118984772.ch11
UR  - https://juser.fz-juelich.de/record/821191
ER  -