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@INBOOK{Balestra:821191,
      author       = {Leadley, David and Prest, Martin and Ahopelto, Jouni and
                      Brien, Tom and Gunnarsson, David and Mauskopf, Phil and
                      Muhonen, Juha and Myronov, Maksym and Nguyen, Hung and
                      Parker, Evan and Prunnila, Mika and Richardson-Bullock,
                      James and Shah, Vishal and Whall, Terry and Zhao, Qing-Tai},
      editor       = {Balestra, Francis},
      title        = {{S}ilicon-{B}ased {C}ooling {E}lements},
      address      = {Hoboken, NJ, USA},
      publisher    = {John Wiley $\&$ Sons, Inc.},
      reportid     = {FZJ-2016-06429},
      isbn         = {1-84821-654-8},
      series       = {ISTE},
      pages        = {303-330},
      year         = {2014},
      note         = {Description based upon print version of record; English},
      comment      = {Beyond-CMOS Nanodevices 1 / Balestra, Francis (Editor)},
      booktitle     = {Beyond-CMOS Nanodevices 1 / Balestra,
                       Francis (Editor)},
      abstract     = {This chapter presents an introduction to
                      superconductor-semiconductor (S-Sm) tunnel junction coolers,
                      before outlining some of the progresses made during the
                      nanofunction program on electron cooling from 300 mK in
                      silicon-based junctions. PtSi is an interesting material to
                      consider as a Schottky barrier to Si because of its role as
                      a contact material in the semiconductor industry. The
                      chapter investigates carrier-phonon coupling in unstrained
                      silicon, with both n- and p-type dopants, and the effect of
                      increasing the strain in silicon grown on a Si1–xGex
                      virtual substrate with the Ge fraction x of $20\%$ and
                      $30\%.$ The reduction in e-ph coupling shows promise for
                      dramatic improvements in performance of bolometric detectors
                      for a variety of electromagnetic radiation sensing
                      applications using silicon based cold electron bolometers.},
      cin          = {PGI-9},
      ddc          = {621.381},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)7},
      doi          = {10.1002/9781118984772.ch11},
      url          = {https://juser.fz-juelich.de/record/821191},
}