001 | 821191 | ||
005 | 20210129224822.0 | ||
020 | _ | _ | |a 1-84821-654-8 |
020 | _ | _ | |a 978-1-84821-654-9 |
024 | 7 | _ | |2 doi |a 10.1002/9781118984772.ch11 |
037 | _ | _ | |a FZJ-2016-06429 |
041 | _ | _ | |a English |
082 | _ | _ | |a 621.381 |
100 | 1 | _ | |0 P:(DE-HGF)0 |a Balestra, Francis |b 0 |e Editor |
245 | _ | _ | |a Silicon-Based Cooling Elements |
260 | _ | _ | |a Hoboken, NJ, USA |b John Wiley & Sons, Inc. |c 2014 |
295 | 1 | 0 | |a Beyond-CMOS Nanodevices 1 / Balestra, Francis (Editor) |
300 | _ | _ | |a 303-330 |
336 | 7 | _ | |2 ORCID |a BOOK_CHAPTER |
336 | 7 | _ | |0 7 |2 EndNote |a Book Section |
336 | 7 | _ | |2 DRIVER |a bookPart |
336 | 7 | _ | |2 BibTeX |a INBOOK |
336 | 7 | _ | |2 DataCite |a Output Types/Book chapter |
336 | 7 | _ | |0 PUB:(DE-HGF)7 |2 PUB:(DE-HGF) |a Contribution to a book |b contb |m contb |s 1481205009_21506 |
490 | 0 | _ | |a ISTE |
500 | _ | _ | |a Description based upon print version of record; English |
520 | _ | _ | |a This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers. |
536 | _ | _ | |0 G:(DE-HGF)POF3-521 |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |c POF3-521 |f POF III |x 0 |
588 | _ | _ | |a Dataset connected to CrossRef Book |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Leadley, David |b 1 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Prest, Martin |b 2 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Ahopelto, Jouni |b 3 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Brien, Tom |b 4 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Gunnarsson, David |b 5 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Mauskopf, Phil |b 6 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Muhonen, Juha |b 7 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Myronov, Maksym |b 8 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Nguyen, Hung |b 9 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Parker, Evan |b 10 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Prunnila, Mika |b 11 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Richardson-Bullock, James |b 12 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Shah, Vishal |b 13 |
700 | 1 | _ | |0 P:(DE-HGF)0 |a Whall, Terry |b 14 |
700 | 1 | _ | |0 P:(DE-Juel1)128649 |a Zhao, Qing-Tai |b 15 |u fzj |
773 | _ | _ | |a 10.1002/9781118984772.ch11 |
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914 | 1 | _ | |y 2016 |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
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