001     821191
005     20210129224822.0
020 _ _ |a 1-84821-654-8
020 _ _ |a 978-1-84821-654-9
024 7 _ |2 doi
|a 10.1002/9781118984772.ch11
037 _ _ |a FZJ-2016-06429
041 _ _ |a English
082 _ _ |a 621.381
100 1 _ |0 P:(DE-HGF)0
|a Balestra, Francis
|b 0
|e Editor
245 _ _ |a Silicon-Based Cooling Elements
260 _ _ |a Hoboken, NJ, USA
|b John Wiley & Sons, Inc.
|c 2014
295 1 0 |a Beyond-CMOS Nanodevices 1 / Balestra, Francis (Editor)
300 _ _ |a 303-330
336 7 _ |2 ORCID
|a BOOK_CHAPTER
336 7 _ |0 7
|2 EndNote
|a Book Section
336 7 _ |2 DRIVER
|a bookPart
336 7 _ |2 BibTeX
|a INBOOK
336 7 _ |2 DataCite
|a Output Types/Book chapter
336 7 _ |0 PUB:(DE-HGF)7
|2 PUB:(DE-HGF)
|a Contribution to a book
|b contb
|m contb
|s 1481205009_21506
490 0 _ |a ISTE
500 _ _ |a Description based upon print version of record; English
520 _ _ |a This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers.
536 _ _ |0 G:(DE-HGF)POF3-521
|a 521 - Controlling Electron Charge-Based Phenomena (POF3-521)
|c POF3-521
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Book
700 1 _ |0 P:(DE-HGF)0
|a Leadley, David
|b 1
700 1 _ |0 P:(DE-HGF)0
|a Prest, Martin
|b 2
700 1 _ |0 P:(DE-HGF)0
|a Ahopelto, Jouni
|b 3
700 1 _ |0 P:(DE-HGF)0
|a Brien, Tom
|b 4
700 1 _ |0 P:(DE-HGF)0
|a Gunnarsson, David
|b 5
700 1 _ |0 P:(DE-HGF)0
|a Mauskopf, Phil
|b 6
700 1 _ |0 P:(DE-HGF)0
|a Muhonen, Juha
|b 7
700 1 _ |0 P:(DE-HGF)0
|a Myronov, Maksym
|b 8
700 1 _ |0 P:(DE-HGF)0
|a Nguyen, Hung
|b 9
700 1 _ |0 P:(DE-HGF)0
|a Parker, Evan
|b 10
700 1 _ |0 P:(DE-HGF)0
|a Prunnila, Mika
|b 11
700 1 _ |0 P:(DE-HGF)0
|a Richardson-Bullock, James
|b 12
700 1 _ |0 P:(DE-HGF)0
|a Shah, Vishal
|b 13
700 1 _ |0 P:(DE-HGF)0
|a Whall, Terry
|b 14
700 1 _ |0 P:(DE-Juel1)128649
|a Zhao, Qing-Tai
|b 15
|u fzj
773 _ _ |a 10.1002/9781118984772.ch11
909 C O |o oai:juser.fz-juelich.de:821191
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910 1 _ |0 I:(DE-588b)5008462-8
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|a Forschungszentrum Jülich
|b 15
|k FZJ
913 1 _ |0 G:(DE-HGF)POF3-521
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|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|v Controlling Electron Charge-Based Phenomena
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a contb
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 _ _ |a UNRESTRICTED


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21