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@ARTICLE{Smeets:823951,
      author       = {Smeets, M. and Bittkau, K. and Lentz, F. and Richter,
                      Alexei and Ding, K. and Carius, R. and Rau, U. and Paetzold,
                      U. W.},
      title        = {{P}ost passivation light trapping back contacts for silicon
                      heterojunction solar cells},
      journal      = {Nanoscale},
      volume       = {8},
      number       = {44},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2016-06579},
      pages        = {18726 - 18733},
      year         = {2016},
      abstract     = {Light trapping in crystalline silicon (c-Si) solar cells is
                      an essential building block for high efficiency solar cells
                      targeting low material consumption and low costs. In this
                      study, we present the successful implementation of highly
                      efficient light-trapping back contacts, subsequent to the
                      passivation of Si heterojunction solar cells. The back
                      contacts are realized by texturing an amorphous silicon
                      layer with a refractive index close to the one of
                      crystalline silicon at the back side of the silicon wafer.
                      As a result, decoupling of optically active and electrically
                      active layers is introduced. In the long run, the presented
                      concept has the potential to improve light trapping in
                      monolithic Si multijunction solar cells as well as solar
                      cell configurations where texturing of the Si absorber
                      surfaces usually results in a deterioration of the
                      electrical properties. As part of this study, different
                      light-trapping textures were applied to prototype silicon
                      heterojunction solar cells. The best path length enhancement
                      factors, at high passivation quality, were obtained with
                      light-trapping textures based on randomly distributed
                      craters. Comparing a planar reference solar cell with an
                      absorber thickness of 280 μm and additional anti-reflection
                      coating, the short-circuit current density (JSC) improves
                      for a similar solar cell with light-trapping back contact.
                      Due to the light trapping back contact, the JSC is enhanced
                      around 1.8 mA cm−2 to 38.5 mA cm−2 due to light trapping
                      in the wavelength range between 1000 nm and 1150 nm.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) /
                      CHEETAH - Cost-reduction through material optimisation and
                      Higher EnErgy outpuT of solAr pHotovoltaic modules - joining
                      Europe’s Research and Development efforts in support of
                      its PV industry (609788) / HITEC - Helmholtz
                      Interdisciplinary Doctoral Training in Energy and Climate
                      Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(EU-Grant)609788 /
                      G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000387858700019},
      doi          = {10.1039/C6NR04960E},
      url          = {https://juser.fz-juelich.de/record/823951},
}