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@ARTICLE{Jin:824231,
      author       = {Jin, Jiehong and Stoica, Toma and Trellenkamp, Stefan and
                      Chen, Yang and Anttu, Nicklas and Migunov, Vadim and
                      Kawabata, Rudy and Buenconsejo, Pio J. S. and Lam, Yeng M.
                      and Haas, Fabian and Hardtdegen, Hilde and Grützmacher,
                      Detlev and Kardynal, Beata},
      title        = {{D}ense, {R}egular {G}a{A}s {N}anowire {A}rrays by
                      {C}atalyst-{F}ree {V}apor {P}hase {E}pitaxy for {L}ight
                      {H}arvesting},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {8},
      number       = {34},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2016-06850},
      pages        = {22484 - 22492},
      year         = {2016},
      abstract     = {Density dependent growth and optical properties of periodic
                      arrays of GaAs nanowires (NWs) by fast selective area growth
                      MOVPE are investigated. As the period of the arrays is
                      decreased from 500 nm down to 100 nm, a volume growth
                      enhancement by a factor of up to four compared with the
                      growth of a planar layer is observed. This increase is
                      explained as resulting from increased collection of
                      precursors on the side walls of the nanowires due to the gas
                      flow redistribution in the space between the NWs. Normal
                      spectral reflectance of the arrays is strongly reduced
                      compared with a flat substrate surface in all fabricated
                      arrays. Electromagnetic modeling reveals that this reduction
                      is caused by antireflective action of the nanowire arrays
                      and nanowire-diameter dependent light absorption.
                      Irrespective of the periodicity and diameter, Raman
                      scattering and grazing angle X-ray diffraction show signal
                      from zinc blende and wurtzite phases, the latter originating
                      from stacking faults as observed by high resolution
                      transmission electron microscopy. Raman spectra contain
                      intense surface phonons peaks, whose intensity depends
                      strongly on the nanowire diameters as a result of potential
                      structural changes and as well as variations of optical
                      field distribution in the nanowires.},
      cin          = {PGI-9 / PGI-8-PT / PGI-5 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-8-PT-20110228
                      / I:(DE-Juel1)PGI-5-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000382514100078},
      doi          = {10.1021/acsami.6b05581},
      url          = {https://juser.fz-juelich.de/record/824231},
}